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Results: 1-3 |
Results: 3
LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) SEMIINSULATING OXYGEN-DOPED SILICON FILMS BY THE PECVD TECHNIQUE FOR LARGE-AREA POWERAPPLICATIONS
Authors: CLOUGH FJ BROWN AO MADATHIL SNE MILNE WI
Citation: Fj. Clough et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) SEMIINSULATING OXYGEN-DOPED SILICON FILMS BY THE PECVD TECHNIQUE FOR LARGE-AREA POWERAPPLICATIONS, Microelectronic engineering, 28(1-4), 1995, pp. 451-454
LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) SEMIINSULATING OXYGEN-DOPED SILICON FILMS BY THE PECVD TECHNIQUE FOR LARGE-AREA POWERAPPLICATIONS
Authors: CLOUGH FJ BROWN AO MADATHIL SNE MILNE WI
Citation: Fj. Clough et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) SEMIINSULATING OXYGEN-DOPED SILICON FILMS BY THE PECVD TECHNIQUE FOR LARGE-AREA POWERAPPLICATIONS, Thin solid films, 270(1-2), 1995, pp. 517-521
PRACTICAL APPROACH TO DETERMINING CHARGE COLLECTED IN MULTIJUNCTION STRUCTURES DUE TO THE ION SHUNT EFFECT
Authors: BROWN AO BHUVA B KERNS SE STAPOR WJ
Citation: Ao. Brown et al., PRACTICAL APPROACH TO DETERMINING CHARGE COLLECTED IN MULTIJUNCTION STRUCTURES DUE TO THE ION SHUNT EFFECT, IEEE transactions on nuclear science, 40(6), 1993, pp. 1918-1925
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