Authors: REN F LOTHIAN JR PEARTON SJ ABERNATHY CR WISK PW FULLOWAN TR TSENG B CHU SNG CHEN YK YANG LW FU ST BROZOVICH RS LIN HH HENNING CL HENRY T

Citation: F. Ren et al., FABRICATION OF SELF-ALIGNED GAAS ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 2916-2928

Authors: REN F ABERNATHY CR PEARTON SJ LOTHIAN JR WISK PW FULLOWAN TR CHEN YK YANG LW FU ST BROZOVICH RS LIN HH

Citation: F. Ren et al., SELF-ALIGNED INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATION/, IEEE electron device letters, 14(7), 1993, pp. 332-334