Authors: BUIU O TAYLOR S ALKOFAHI IS BEECH C

Citation: O. Buiu et al., THE EFFECT OF HOT-ELECTRON CURRENT-DENSITY ON NMOSFET RELIABILITY, Microelectronics and reliability, 38(6-8), 1998, pp. 1085-1089

Authors: COBIANU C SAVANIU C BUIU O DASCALU D ZAHARESCU M PARLOG C VANDENBERG A PECZ B

Citation: C. Cobianu et al., TIN DIOXIDE SOL-GEL DERIVED THAN FILMS DEPOSITED ON POROUS SILICON, Sensors and actuators. B, Chemical, 43(1-3), 1997, pp. 114-120

Authors: KHANH NQ TUTTO P BUIU O JAROLI EN BIRO LP MANUABA A GYULAI J

Citation: Nq. Khanh et al., CHARGE-CARRIER LIFETIME MODIFICATION IN SILICON BY HIGH-ENERGY H-IMPLANTATION( OR HE+ ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 388-392

Authors: BUIU O GARTNER M PLUGARU R DUMITRU M

Citation: O. Buiu et al., IMPLANTED DAMAGE EVOLUTION IN SEQUENTIAL ANNEALED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 933-935