Authors: BARABAN AP BULAVINOV VV MUSTAFA NS SOBCHENKO SA

Citation: Ap. Baraban et al., DEFECT-FORMING IN SI-SIO2 STRUCTURES IN P REBREAKDOWN ELECTRICAL FIELDS, Pis'ma v Zurnal tehniceskoj fiziki, 21(18), 1995, pp. 80-84

Authors: BARABAN AP BULAVINOV VV DROZD VE NIKIFOROVA IO SERGIENKO MV

Citation: Ap. Baraban et al., ELECTROPHYSICAL CHARACTERISTICS OF AL-AL2 O3 STRUCTURES SYNTHESIZED BY THE MOLECULAR STRATIFYING TECHNIQUE, Zurnal tehniceskoj fiziki, 65(4), 1995, pp. 203-206

Authors: BARABAN AP BULAVINOV VV STEPANOV YA

Citation: Ap. Baraban et al., PHOTOLUMINESCENCE OF SI3N4 LAYERS ON SILI CON SURFACE UNDER THE LASEREXCITATION, Zurnal tehniceskoj fiziki, 63(10), 1993, pp. 203-206