Authors: FARAHANI MM BULLER JF GARG S

Citation: Mm. Farahani et al., LIMITATION OF THE TIN TI LAYER FORMED BY THE RAPID THERMAL HEAT-TREATMENT OF PURE TI FILMS IN AN NH3 AMBIENT IN FABRICATION OF SUBMICROMETER CMOS FLASH EPROM ICS/, IEEE transactions on semiconductor manufacturing, 10(1), 1997, pp. 147-153

Authors: BULLER JF BANDYOPADHYAY B GARG S PATEL N

Citation: Jf. Buller et al., IMPROVED EEPROM TUNNEL-OXIDE AND GATE-OXIDE QUALITY BY INTEGRATION OFA LOW-TEMPERATURE PRE-TUNNEL-OXIDE RCA SC-1 CLEAN, IEEE transactions on semiconductor manufacturing, 9(3), 1996, pp. 471-476

Authors: BULLER JF FARAHANI MM GARG S

Citation: Jf. Buller et al., MANUFACTURING ISSUES RELATED TO RTP INDUCED OVERLAY ERRORS IN A GLOBAL ALIGNMENT STEPPER TECHNOLOGY, IEEE transactions on semiconductor manufacturing, 9(1), 1996, pp. 108-114

Authors: FARAHANI MM BULLER JF MOORE BT GARG S

Citation: Mm. Farahani et al., CONVENTIONAL CONTACT INTERCONNECT TECHNOLOGY AS AN ALTERNATIVE TO CONTACT PLUG (W) TECHNOLOGY FOR 0.85 MU-M CMOS EPROM IC DEVICES, IEEE transactions on semiconductor manufacturing, 7(1), 1994, pp. 79-86