Authors: CHERTOUK M BURKNER S BACHEM K PLETSCHEN W KRAUS S BRAUNSTEIN J TRANKLE G

Citation: M. Chertouk et al., ADVANTAGES OF AL-FREE GAINP INGAAS PHEMTS FOR POWER APPLICATIONS/, Electronics Letters, 34(6), 1998, pp. 590-592

Authors: BURKNER S BAEUMLER M WAGNER J LARKINS EC ROTHEMUND W RALSTON JD

Citation: S. Burkner et al., INFLUENCE OF INTERDIFFUSION PROCESSES ON OPTICAL AND STRUCTURAL-PROPERTIES OF PSEUDOMORPHIC IN0.35GA0.65AS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Journal of applied physics, 79(9), 1996, pp. 6818-6825

Authors: BURKNER S RALSTON JD WEISSER S ROSENZWEIG J LARKINS EC SAH RE FLEISSNER J

Citation: S. Burkner et al., WAVELENGTH TUNING OF HIGH-SPEED INGAAS-GAAS-ALGAAS PSEUDOMORPHIC MQW LASERS VIA IMPURITY-FREE INTERDIFFUSION, IEEE photonics technology letters, 7(9), 1995, pp. 941-943

Authors: BURKNER S MAIER M LARKINS EC ROTHEMUND W OREILLY EP RALSTON JD

Citation: S. Burkner et al., PROCESS PARAMETER DEPENDENCE OF IMPURITY-FREE INTERDIFFUSION IN GAAS ALXGA1-XAS AND INYGA1-YAS/GAAS MULTIPLE-QUANTUM WELLS/, Journal of electronic materials, 24(7), 1995, pp. 805-812

Authors: BURKNER S LARKINS EC BAEUMLER M WAGNER J ROTHEMUND W FLEMIG G RALSTON JD

Citation: S. Burkner et al., IMPURITY FREE SELECTIVE INTERDIFFUSION OF PSEUDOMORPHIC INYGA1-YAS GAAS MULTIPLE-QUANTUM-WELL LASER AND MODULATOR STRUCTURES/, Materials science and technology, 11(8), 1995, pp. 840-843

Authors: FLEMIG GW BRENN R LARKINS EC BURKNER S BENDER G BAEUMLER M RALSTON JD

Citation: Gw. Flemig et al., ION-CHANNELING STUDIES OF INYGA1-YAS GAAS STRAINED-LAYER SINGLE AND MULTIPLE-QUANTUM-WELL STRUCTURES/, Journal of crystal growth, 143(1-2), 1994, pp. 29-39