Authors:
BUSCHMANN V
FEDINA L
RODEWALD M
VANTENDELOO G
Citation: V. Buschmann et al., A NEW MODEL FOR THE (2X1) RECONSTRUCTED COSI2-SI(100) INTERFACE, Philosophical magazine letters, 77(3), 1998, pp. 147-151
Citation: V. Buschmann et al., HREM STUDY OF 3C-SIC NANOPARTICLES - INFLUENCE OF GROWTH-CONDITIONS ON CRYSTALLINE QUALITY, Journal of crystal growth, 193(3), 1998, pp. 335-341
Authors:
BUSCHMANN V
RODEWALD M
FUESS H
VANTENDELOO G
SCHAFFER C
Citation: V. Buschmann et al., HETEROEPITAXIAL GROWTH OF COSI2 THIN-FILMS ON SI(100) - TEMPLATE EFFECTS AND EPITAXIAL ORIENTATIONS, Journal of crystal growth, 191(3), 1998, pp. 430-438
Authors:
VOGT A
SIMON A
HARTNAGEL HL
SCHIKORA J
BUSCHMANN V
RODEWALD M
FUESS H
FASCKO S
KOERDT C
KURZ H
Citation: A. Vogt et al., OHMIC CONTACT FORMATION MECHANISM OF THE PDGEAU SYSTEM ON N-TYPE GASBGROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 83(12), 1998, pp. 7715-7719
Citation: V. Buschmann et al., A NEW MODEL FOR THE (2X1)-RECONSTRUCTED COSI2 SI(001) INTERFACE BASEDON THE INTERMEDIATE DEFECT CONFIGURATION/, European journal of cell biology, 74, 1997, pp. 115-115
Authors:
BUSCHMANN V
SCHRYVERS D
VANLANDUYT J
VANROOST C
DEKEYZER R
Citation: V. Buschmann et al., A COMPARATIVE INVESTIGATION OF REPLICATION TECHNIQUES USED FOR THE STUDY OF (S-SENSITIZED AGBR MICROCRYSTALS(AU)), Journal of imaging science and technology, 40(3), 1996, pp. 189-201