HETEROEPITAXIAL GROWTH OF COSI2 THIN-FILMS ON SI(100) - TEMPLATE EFFECTS AND EPITAXIAL ORIENTATIONS

This HREM investigation focuses on the influence of point defects on t he final epitaxial relation and atomic interface configuration in a Co Si2/Si(1 0 0) heterostructure. A two-step SPE-MBE grown CoSi2/Si(1 0 0 ) system is used and, by altering the number of deposited Co monolayer s in the template layer, the point defect behavior is studied. We prop ose a film growth model in which the knowledge about the reconstructed (2 x 1) : Si(1 0 0) surface, the point defect behavior in the presenc e of an interface, especially a silicide interface, the migration of p oint defects through a lattice by formation of [1 0 0]-split interstit ial (dumbbell) atomic configurations, and a new type of extended defec t configurations in diamond type materials will all amalgamate. (C) 19 98 Published by Elsevier Science B.V. All rights reserved.