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Results: 1-25/5844
Authors:
JOO HB
YANG GM
LIM DH
KIM JH
KIM KS
LIM KY
SUH EK
Citation: Hb. Joo et al., SELF-ORGANIZED GROWTH OF INGAAS GAAS/ALGAAS QUANTUM-DOT HETEROSTRUCTURES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of crystal growth, 194(2), 1998, pp. 161-165
Authors:
KODAMA S
NAKAJIMA K
SUZUKI Y
OHTSUKI O
SAKAI H
Citation: S. Kodama et al., COMPOSITIONAL VARIATION IN ALGAAS CRYSTALS GROWN BY LPE UNDER MICROGRAVITY AND TERRESTRIAL CONDITIONS, Journal of crystal growth, 194(2), 1998, pp. 166-172
Authors:
VESCAN L
Citation: L. Vescan, LATERAL ORDERING OF GE ISLANDS ALONG FACETS, Journal of crystal growth, 194(2), 1998, pp. 173-177
Authors:
ISHIMARU M
MUNETOH S
MOTOOKA T
MORIGUCHI K
SHINTANI A
Citation: M. Ishimaru et al., BEHAVIOR OF IMPURITY ATOMS DURING CRYSTAL-GROWTH FROM MELTED SILICON - CARBON-ATOMS, Journal of crystal growth, 194(2), 1998, pp. 178-188
Authors:
JIN S
BENDER H
WU MF
VANTOMME A
HOGG S
PATTYN H
LANGOUCHE G
Citation: S. Jin et al., GROWTH OF HIGH-QUALITY BURIED Y-SILICIDE AND (Y,ND)-SILICIDE LAYERS PREPARED BY CHANNELED ION-IMPLANTATION, Journal of crystal growth, 194(2), 1998, pp. 189-194
Authors:
BALAKUMAR S
ZENG HC
Citation: S. Balakumar et Hc. Zeng, PREPARATION OF ORTHORHOMBIC MOLYBDENUM TRIOXIDE CRYSTALS USING A SEMIOPEN FLUX GROWTH SYSTEM, Journal of crystal growth, 194(2), 1998, pp. 195-202
Authors:
SHIMAMURA K
KOCHURIKHIN VV
TAKEDA H
FUKUDA T
Citation: K. Shimamura et al., GROWTH OF GD-YB-GA GARNET SINGLE-CRYSTALS WITH LARGE LATTICE-PARAMETERS AS SUBSTRATES FOR OPTICAL ISOLATORS, Journal of crystal growth, 194(2), 1998, pp. 203-208
Authors:
SHIMAMURA K
TABATA H
TAKEDA H
KOCHURIKHIN VV
FUKUDA T
Citation: K. Shimamura et al., GROWTH AND CHARACTERIZATION OF (LA,SR)(AL,TA)O-3 SINGLE-CRYSTALS AS SUBSTRATES FOR GAN EPITAXIAL-GROWTH, Journal of crystal growth, 194(2), 1998, pp. 209-213
Authors:
SANGWAL K
BORC J
PALCZYNSKA T
Citation: K. Sangwal et al., ON THE GROWTH HILLOCK VICINALITY AND NORMAL GROWTH-RATES OF THE (101)FACE OF KDP CRYSTALS, Journal of crystal growth, 194(2), 1998, pp. 214-219
Authors:
TANRIKULU SU
EROGLU I
BULUTCU AN
OZKAR S
Citation: Su. Tanrikulu et al., THE GROWTH AND DISSOLUTION OF AMMONIUM-PERCHLORATE CRYSTALS IN A FLUIDIZED-BED CRYSTALLIZER, Journal of crystal growth, 194(2), 1998, pp. 220-227
Authors:
GIVAND JC
ROUSSEAU RW
LUDOVICE PJ
Citation: Jc. Givand et al., CHARACTERIZATION OF L-ISOLEUCINE CRYSTAL MORPHOLOGY FROM MOLECULAR MODELING, Journal of crystal growth, 194(2), 1998, pp. 228-238
Authors:
KOZISEK Z
DEMO P
Citation: Z. Kozisek et P. Demo, TRANSIENT NUCLEATION OF ETHANOL-HEXANOL VAPOR, Journal of crystal growth, 194(2), 1998, pp. 239-246
Authors:
GUERIN R
LEMAREC C
HALDENWANG P
Citation: R. Guerin et al., STRIATION IN BRIDGMAN DIRECTIONAL SOLIDIFICATION, Journal of crystal growth, 194(2), 1998, pp. 247-262
Authors:
ZHANG WQ
FU H
YANG YS
HU ZQ
Citation: Wq. Zhang et al., A NUMERICAL-MODEL FOR SPACING SELECTION OF LAMELLAR EUTECTICS GROWN FROM FLOWING LIQUIDS, Journal of crystal growth, 194(2), 1998, pp. 263-271
Authors:
HAGEMAN PR
BAUHUIS GJ
OLSTHOORN SM
Citation: Pr. Hageman et al., INFLUENCE OF GA PRECURSOR CHOICE ON ORDERING DEGREE OF MOVPE GROWN GA0.5IN0.5P, Journal of crystal growth, 194(2), 1998, pp. 272-275
Authors:
DUTTA PS
OSTROGORSKY AG
Citation: Ps. Dutta et Ag. Ostrogorsky, SUPPRESSION OF CRACKS IN INXGA1-XSB CRYSTALS THROUGH FORCED-CONVECTION IN THE MELT, Journal of crystal growth, 194(1), 1998, pp. 1-7
Authors:
HENDERSON R
WALTERS F
REYNOLDS CL
SWAMINATHAN V
LUTHER LC
SALVIATI G
FERRARI C
Citation: R. Henderson et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF STRAINED AND STRAIN-COMPENSATED INGAASP INP QUANTUM-WELL LASER STRUCTURES/, Journal of crystal growth, 194(1), 1998, pp. 8-15
Authors:
HIROSE S
YAMAURA M
YOSHIDA A
IBUKA H
HARA K
MUNEKATA H
Citation: S. Hirose et al., MECHANISM OF ATOMIC LAYER EPITAXY OF ALAS, Journal of crystal growth, 194(1), 1998, pp. 16-24
Authors:
LU LW
ZHANG YH
YANG GW
WANG J
GE WK
Citation: Lw. Lu et al., THRESHOLD REDUCTION IN STRAINED-LAYER INGAAS GAAS QUANTUM-WELL LASERSBY LIQUID-PHASE EPITAXY REGROWTH/, Journal of crystal growth, 194(1), 1998, pp. 25-30
Authors:
YANG QK
CHEN JX
LI AZ
Citation: Qk. Yang et al., PHOTOLUMINESCENCE STUDY OF INGAAS INALAS SINGLE AND MULTIPLE-QUANTUM WELLS/, Journal of crystal growth, 194(1), 1998, pp. 31-36
Authors:
KIM ST
LEE YJ
MOON DC
HONG CH
YOO TK
Citation: St. Kim et al., PREPARATION AND PROPERTIES OF FREESTANDING HVPE GROWN GAN SUBSTRATES, Journal of crystal growth, 194(1), 1998, pp. 37-42
Authors:
BOITON P
GIACOMETTI N
SANTAILLER JL
DUFFAR T
NABOT JP
Citation: P. Boiton et al., EXPERIMENTAL-DETERMINATION AND NUMERICAL MODELING OF SOLID-LIQUID INTERFACE SHAPES FOR VERTICAL BRIDGMAN GROWN GASB CRYSTALS, Journal of crystal growth, 194(1), 1998, pp. 43-52
Authors:
KRASNOV AN
BAJCAR RC
HOFSTRA PG
Citation: An. Krasnov et al., THRESHOLD VOLTAGE TRENDS IN ZNS-MN-BASED ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES - ROLE OF NATIVE DEFECTS, Journal of crystal growth, 194(1), 1998, pp. 53-60
Authors:
NAM S
O B
LEE KS
CHOI YD
Citation: S. Nam et al., OPTIMUM GROWTH AND PROPERTIES OF ZNS GAAS(100) EPILAYERS BY HOT-WALL EPITAXY/, Journal of crystal growth, 194(1), 1998, pp. 61-69
Authors:
MAEDA S
TAKEUCHI K
KATO M
ABE K
NAKANISHI H
HOSHIKAWA K
TERASHIMA K
Citation: S. Maeda et al., MORPHOLOGY VARIATIONS ON INNER SURFACE OF SILICA CRUCIBLES DEPENDING ON OXYGEN CONCENTRATION IN SILICON MELTS, Journal of crystal growth, 194(1), 1998, pp. 70-75