GROWTH OF HIGH-QUALITY BURIED Y-SILICIDE AND (Y,ND)-SILICIDE LAYERS PREPARED BY CHANNELED ION-IMPLANTATION

A buried hexagonal YSi1.7 layer is formed by channelled implantation o f Y ions into (1 1 1) oriented silicon wafers. The orientation relatio nship between the epitaxial YSi1.7 and the silicon is (0 0 0 1)(YSi1.7 )parallel to(1 1 1)(Si) With [1 1 (2) over bar 0](YSi1.7)parallel to[1 (1) over bar 0)(Si). Annealing at 600 degrees C for 1 h and subsequen tly at 1000 degrees C for 0.5 h improves the crystalline quality of th e buried YSi1.7 layer. On the other hand, Nd-disilicide cannot be grow n epitaxially on a Si(1 1 1) substrate. However, by using a sequential implantation of Y and Nd ions, a buried hexagonal Nd0.32Y0.68Si1.7 la yer with good crystalline quality is formed in the Sill 1 1) substrate . (C) 1998 Elsevier Science B.V. All rights reserved.