PHOTOLUMINESCENCE STUDY OF INGAAS INALAS SINGLE AND MULTIPLE-QUANTUM WELLS/

The overall photoluminescence properties of In0.53Ga0.47As/In0.52Al0.4 8As Single quantum well and multiple quantum wells of the same InGaAs well width 4.0 nm are reported. Results show that the dominant recombi nation processes in the two structures are radiative recombination in the whole measuring temperature range from the photoluminescence inten sity-excitation power dependence, but the recombination process in the single quantum well structure is somewhat like band-to-band type. The band gap-temperature dependence relationship, photoluminescence peak' s full width at half maximum-temperature dependent relationship and th e photoluminescence spectra line shape at low temperature are in favor of the gradual evolution from excitonic to band-to-band type in the s ingle quantum well structure. (C) 1998 Elsevier Science B.V. All right s reserved.