GROWTH AND CHARACTERIZATION OF (LA,SR)(AL,TA)O-3 SINGLE-CRYSTALS AS SUBSTRATES FOR GAN EPITAXIAL-GROWTH

Authors
SHIMAMURA K TABATA H TAKEDA H KOCHURIKHIN VV FUKUDA T
Citation
K. Shimamura et al., GROWTH AND CHARACTERIZATION OF (LA,SR)(AL,TA)O-3 SINGLE-CRYSTALS AS SUBSTRATES FOR GAN EPITAXIAL-GROWTH, Journal of crystal growth, 194(2), 1998, pp. 209-213
Citations number
15
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
194
Issue
2
Year of publication
1998
Pages
209 - 213
Database
ISI
SICI code
0022-0248(1998)194:2<209:GACO(S>2.0.ZU;2-G
Abstract
We have successfully grown [111] oriented (La,Sr)(Al,Ta)O-3 (LSAT) mix ed-perovskite single crystals by the Czochralski method. Compositional uniformity and coloring phenomena are discussed in relation to the gr owth conditions. Since LSAT single crystals have excellent lattice mat ching with GaN, they are promising as new substrates for the growth of high-quality GaN epitaxial layers. (C) 1998 Elsevier Science B.V. All rights reserved.