SELF-ORGANIZED GROWTH OF INGAAS GAAS/ALGAAS QUANTUM-DOT HETEROSTRUCTURES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

Self-organized In(0.6)G(0.4)As/GaAs/AlGaAs quantum dot (QD) heterostru ctures were grown by metalorganic chemical vapor deposition using the Stranski-Krastanow growth mode. The atomic force microscopy image show s that the quantum dot structures are formed. The room-temperature pho toluminescence (PL) measurement was employed to establish the optimize d growth condition for QD structures. A strong PL emission was obtaine d at room temperature. Blueshifts in the PL emission from InGaAs QDs a re observed as a results of postgrowth annealing and also when raising the upper cladding layer growth temperatures. Also, the strong electr oluminescence at room temperature shows the possibility of QD optical device. Using the optimized growth condition, a full laser structure w as fabricated by selective oxidation. (C) 1998 Elsevier Science B.V. A ll rights reserved.