Authors: BYKOVSKII VA UTENKO VI SHOKH VF KORSHUNOV FP SOLODOVNIKOV ES

Citation: Va. Bykovskii et al., RADIATIVE RECOMBINATION AND IMPURITY-DEFECT INTERACTIONS IN NUCLEAR-DOPED GALLIUM-ARSENIDE PRODUCED UNDER DIFFERENT IRRADIATION AND CRYSTAL-GROWTH CONDITIONS, Semiconductors, 30(7), 1996, pp. 685-689

Authors: AKULOVICH NI BYKOVSKII VA KARPOVICH LM UTENKO VI SHOKH VF PETRENKO VV

Citation: Ni. Akulovich et al., INTRODUCTION OF ACCEPTOR IMPURITIES BY PHOTONUCLEAR DOPING OF GALLIUM-ARSENIDE, Semiconductors, 30(2), 1996, pp. 158-161

Authors: BYKOVSKII VA DOBREGO VP DOLGIKH NI EMTSEV VV HALLER EE

Citation: Va. Bykovskii et al., RADIATIVE RECOMBINATION IN GERMANIUM BOMBARDED BY REACTOR NEUTRONS, Semiconductors, 29(12), 1995, pp. 1172-1175

Authors: CHAO C BYKOVSKII VA TARASIK MI

Citation: C. Chao et al., PHOTOLUMINESCENCE OF UNDOPED SEMIINSULATING GALLIUM-ARSENIDE HEAT-TREATED AT AN EXCESS ARSENIC VAPOR-PRESSURE, Semiconductors, 28(1), 1994, pp. 19-22