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Results: 1-25/30
Authors:
CHO BC
KIM M
LEE JH
BYUN JS
PARK JS
BAIK BS
Citation: Bc. Cho et al., PHARYNGOESOPHAGEAL RECONSTRUCTION WITH A TUBED FREE RADIAL FOREARM FLAP, Journal of reconstructive microsurgery, 14(8), 1998, pp. 535-540
Authors:
CHO BC
LEE MS
LEE JH
BYUN JS
BAIK BS
Citation: Bc. Cho et al., THE EFFECTS OF SURGICAL AND CHEMICAL DELAY PROCEDURES ON THE SURVIVALOF ARTERIALIZED VENOUS FLAPS IN RABBITS, Plastic and reconstructive surgery, 102(4), 1998, pp. 1134-1143
Authors:
BYUN JS
LEE BH
PARK JS
SOHN DK
CHOI SJ
KIM JJ
Citation: Js. Byun et al., FORMATION OF HIGH-CONDUCTIVITY WSIX LAYER AND ITS CHARACTERIZATION ASA GATE ELECTRODE, Journal of the Electrochemical Society, 145(9), 1998, pp. 3228-3235
Authors:
BYUN JS
CHOI SJ
KIM JJ
CHOI JT
SWENBERG J
ACHUTHARAMAN R
Citation: Js. Byun et al., SELECTIVE TITANIUM SILICIDE DEPOSITION USING SIH4-TICL4-H-2 LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION AND FILM CHARACTERIZATION, Journal of the Electrochemical Society, 145(11), 1998, pp. 3941-3950
Authors:
PARK JS
BYUN JS
SOHN DK
LEE BH
PARK JW
KIM JJ
Citation: Js. Park et al., DOPANT EFFECTS ON LATERAL SILICIDE GROWTH IN SELF-ALIGNED TITANIUM SILICIDE PROCESS, Journal of the Electrochemical Society, 145(10), 1998, pp. 3585-3589
Authors:
PARK JS
SOHN DK
KIM Y
BAE JU
LEE BH
BYUN JS
KIM JJ
Citation: Js. Park et al., FORMATION OF EPITAXIAL COSI2 SPIKE IN CO SI3N4/SI(100) SYSTEM AND ITSCRYSTALLOGRAPHIC STRUCTURE/, Applied physics letters, 73(16), 1998, pp. 2284-2286
Authors:
SOHN DK
PARK JS
LEE BH
BAE JU
BYUN JS
KIM JJ
Citation: Dk. Sohn et al., FORMATION OF COTI BARRIER AND INCREASED THERMAL-STABILITY OF COSI2 FILM IN TI CAPPED CO SI(100) SYSTEM/, Applied physics letters, 73(16), 1998, pp. 2302-2304
Authors:
CHO BC
LEE JH
BYUN JS
BAIK BS
Citation: Bc. Cho et al., CLINICAL-APPLICATIONS OF THE DELAYED ARTERIALIZED VENOUS FLAP, Annals of plastic surgery, 39(2), 1997, pp. 145-157
Authors:
LEE KN
AHN JG
HWANG H
BYUN JS
LEE YJ
Citation: Kn. Lee et al., THE EFFECTS OF SCREEN OXIDE AND LOW-TEMPERATURE BPSG ANNEAL ON TITANIUM SALICIDE FORMATION, Thin solid films, 308, 1997, pp. 585-588
Authors:
BYUN JS
PARK JS
KIM JJ
Citation: Js. Byun et al., EFFECT OF DEPOSITION TEMPERATURE AND SPUTTERING AMBIENT ON IN-SITU COBALT SILICIDE FORMATION, Journal of the Electrochemical Society, 144(9), 1997, pp. 3175-3179
Authors:
BYUN JS
LEE BH
PARK JS
KIM JJ
Citation: Js. Byun et al., CHARACTERIZATION OF THE DOPANT EFFECT ON DICHLOROSILANE-BASED TUNGSTEN SILICIDE DEPOSITION, Journal of the Electrochemical Society, 144(10), 1997, pp. 3572-3582
Authors:
BYUN JS
KIM JK
PARK JW
KIM JJ
Citation: Js. Byun et al., W AS A BIT-LINE INTERCONNECTION IN CAPACITOR-OVER-BIT-LINE (COB) STRUCTURED DYNAMIC RANDOM-ACCESS MEMORY (DRAM) AND FEASIBLE DIFFUSION BARRIER LAYER, JPN J A P 1, 35(2B), 1996, pp. 1086-1089
Authors:
RHEE BK
BYUN JS
VANSTRYLAND EW
Citation: Bk. Rhee et al., Z-SCAN USING CIRCULARLY SYMMETRICAL BEAMS, Journal of the Optical Society of America. B, Optical physics, 13(12), 1996, pp. 2720-2723
Authors:
BYUN JS
HAN SW
LEE SH
CHOI SK
LEE JD
Citation: Js. Byun et al., INTERPRETATION OF PHOTON DEFECT ON DMSA RENAL SCAN IN CHILDREN WITH URINARY-TRACT INFECTION, Kidney international, 50(2), 1996, pp. 706-706
Authors:
LEE TW
BYUN JS
Citation: Tw. Lee et Js. Byun, MICROSTRUCTURAL GROWTH IN OTOLITHS OF CONGER EEL (CONGER MYRIASTER) LEPTOCEPHALI DURING THE METAMORPHIC STAGE, Marine Biology, 125(2), 1996, pp. 259-268
Authors:
BYUN JS
Citation: Js. Byun, EPITAXIAL C49-TISI2 FORMATION ON (100)SI SUBSTRATE USING TINX AND ITSELECTRICAL CHARACTERISTICS AS A SHALLOW CONTACT METALLIZATION, Journal of the Electrochemical Society, 143(6), 1996, pp. 1984-1991
Authors:
BYUN JS
SEON JM
YOUN KS
HWANG HS
PARK JW
KIM JJ
Citation: Js. Byun et al., DEFECT GENERATION DURING EPITAXIAL COSI2 FORMATION USING CO TI BILAYER ON OXIDE PATTERNED (100)SI SUBSTRATE AND ITS EFFECT ON THE ELECTRICAL-PROPERTIES/, Journal of the Electrochemical Society, 143(3), 1996, pp. 56-58
Authors:
KIM SK
MOON BY
BYUN JS
JEON HB
JANG J
Citation: Sk. Kim et al., PREPARATION OF WIDE-BAND GAP MICROCRYSTALLINE SILICON FILM BY USING SIH2CL2, Applied physics letters, 69(8), 1996, pp. 1131-1133
Authors:
HWANG H
LEE DH
AHN JG
BYUN JS
YANG DY
Citation: H. Hwang et al., EFFECT OF CHANNELING OF HALO ION-IMPLANTATION ON THRESHOLD VOLTAGE SHIFT OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, Applied physics letters, 68(7), 1996, pp. 938-939
Authors:
BYUN JS
KIM CR
RHA KG
KIM JJ
KIM WS
Citation: Js. Byun et al., TIN TISI2 FORMATION USING TINX LAYER AND ITS FEASIBILITIES IN ULSI/, JPN J A P 1, 34(2B), 1995, pp. 982-986
Authors:
BYUN JS
CONSTANTINESCU MA
LEE WPA
MAY JW
Citation: Js. Byun et al., EFFECTS OF DELAY PROCEDURES ON VASCULATURE AND SURVIVAL OF ARTERIALIZED VENOUS FLAPS - AN EXPERIMENTAL-STUDY IN RABBITS, Plastic and reconstructive surgery, 96(7), 1995, pp. 1650-1659
Authors:
BYUN JS
RHA KG
KIM JJ
KIM WS
KIM HN
CHO HS
KIM HJ
Citation: Js. Byun et al., FORMATION OF A LARGE GRAIN SIZED TIN LAYER USING TINX, THE EPITAXIAL CONTINUITY AT THE AL TIN INTERFACE, AND ITS ELECTROMIGRATION ENDURANCEIN MULTILAYERED INTERCONNECTION/, Journal of applied physics, 78(3), 1995, pp. 1719-1724
Authors:
BYUN JS
KIM DH
KIM WS
KIM HJ
Citation: Js. Byun et al., EPITAXIAL-GROWTH OF COSI2 LAYER ON (100)SI AND FACET FORMATION AT THECOSI2 SI INTERFACE/, Journal of applied physics, 78(3), 1995, pp. 1725-1730
Authors:
BYUN JS
KIM HJ
Citation: Js. Byun et Hj. Kim, LAYER SEQUENCE AND SILICIDE FORMATION OF A CO (REFRACTORY METAL) BILAYER ON (100)SI SUBSTRATE/, Journal of applied physics, 78(11), 1995, pp. 6784-6790
Authors:
BYUN JS
KIM JJ
KIM WS
KIM HJ
Citation: Js. Byun et al., LAYER REVERSAL OF CO ZR BILAYER AND EPITAXIAL-GROWTH OF COSI2 LAYER ON SI(001) SUBSTRATE/, Journal of the Electrochemical Society, 142(8), 1995, pp. 2805-2812