Authors:
Arita, K
Otsuki, T
Chen, Z
Lim, M
Bacon, JW
de Araujo, CAP
Citation: K. Arita et al., Electrical properties of Y1-based ferroelectric gate MOS capacitors for nonvolatile memory applications, INTEGR FERR, 27(1-4), 1999, pp. 1063-1073
Authors:
Lim, M
Bacon, JW
McMillan, LD
De Araujo, CAP
Citation: M. Lim et al., SBT-based ferroelectric FET for nonvolatile non-destructive read out (NDRO) memory applications, INTEGR FERR, 27(1-4), 1999, pp. 1115-1124