Authors: Braescu, L Balint, AM Balint, S

Citation: L. Braescu et al., Admissible manoeuvres in pulling rate for filament grown from the melt in a vacuum by EFG method, J CRYST GR, 233(3), 2001, pp. 425-430

Authors: Balint, AM Mihailovici, MM Baltean, DG Balint, S

Citation: Am. Balint et al., A modified Chang-Brown model for the determination of the dopant distribution in a Bridgman-Stockbarger semiconductor crystal growth system, J CRYST GR, 230(1-2), 2001, pp. 195-201

Authors: Balint, AM Baltean, DG Levy, T Mihailovici, M Neculae, A Balint, S

Citation: Am. Balint et al., The dopant fields in "uniform-diffusion-layer", "global-thermal-convection" and "precrystallization-zone" models, MAT SC S PR, 3(1-2), 2000, pp. 115-121

Authors: Balint, AM Mihailovici, M Baltean, DG Balint, S

Citation: Am. Balint et al., Interface structure in the growth of semiconductor crystals using the Bridgman-Stockbarger method, THIN SOL FI, 380(1-2), 2000, pp. 108-110