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Results: 1-13 |
Results: 13
The growth of crystallinity in undoped SiO : H films at low RF-power density and substrate temperature
Authors: Sarker, A Bandyopadhyay, AK Barua, AK
Citation: A. Sarker et al., The growth of crystallinity in undoped SiO : H films at low RF-power density and substrate temperature, JPN J A P 2, 40(2A), 2001, pp. L94-L96
Control of the crystallite size and passivation of defects in porous silicon by a novel method
Authors: Sharma, SN Banerjee, R Das, D Chattopadhyay, S Barua, AK
Citation: Sn. Sharma et al., Control of the crystallite size and passivation of defects in porous silicon by a novel method, APPL SURF S, 182(3-4), 2001, pp. 333-337
Heterogeneity in microcrystalline-transition state: Origin of Si-nucleation and microcrystallization at higher rf power from Ar-diluted SiH4 plasma
Authors: Das, D Jana, M Barua, AK
Citation: D. Das et al., Heterogeneity in microcrystalline-transition state: Origin of Si-nucleation and microcrystallization at higher rf power from Ar-diluted SiH4 plasma, J APPL PHYS, 89(5), 2001, pp. 3041-3048
Characterization of undoped mu c-SiO : H films prepared from (SiH4+CO2+H-2)-plasma in RF glow discharge
Authors: Das, D Jana, M Barua, AK
Citation: D. Das et al., Characterization of undoped mu c-SiO : H films prepared from (SiH4+CO2+H-2)-plasma in RF glow discharge, SOL EN MAT, 63(3), 2000, pp. 285-297
Properties of a-SiO : H films prepared by RF glow discharge
Authors: Das, D Barua, AK
Citation: D. Das et Ak. Barua, Properties of a-SiO : H films prepared by RF glow discharge, SOL EN MAT, 60(2), 2000, pp. 167-179
Lowering of thickness of N-type microcrystalline hydrogenated silicon filmby seeding technique
Authors: Barua, AK Mandal, S
Citation: Ak. Barua et S. Mandal, Lowering of thickness of N-type microcrystalline hydrogenated silicon filmby seeding technique, JPN J A P 2, 38(9AB), 1999, pp. L981-L983
Highly conducting undoped mu c-SiO : H films prepared by RF glow discharge
Authors: Das, D Barua, AK
Citation: D. Das et Ak. Barua, Highly conducting undoped mu c-SiO : H films prepared by RF glow discharge, JPN J A P 2, 38(7A), 1999, pp. L697-L699
Control of crystallization at low thickness in mu c-Si : H films using layer-by-layer growth scheme
Authors: Jana, M Das, D Kshirsagar, ST Barua, AK
Citation: M. Jana et al., Control of crystallization at low thickness in mu c-Si : H films using layer-by-layer growth scheme, JPN J A P 2, 38(10A), 1999, pp. L1087-L1090
The World Photovoltaic Scale: An international reference cell calibration program
Authors: Osterwald, CR Anevsky, S Bucher, K Barua, AK Chaudhuri, P Dubard, J Emery, K Hansen, B King, D Metzdorf, J Nagamine, F Shimokawa, R Wang, YX Wittchen, T Zaaiman, W Zastrow, A Zhang, J
Citation: Cr. Osterwald et al., The World Photovoltaic Scale: An international reference cell calibration program, PROG PHOTOV, 7(4), 1999, pp. 287-297
Control of the properties of wide bandgap a-SiC : H films prepared by RF PECVD method by varying methane flow rate
Authors: Iftiquar, SM Barua, AK
Citation: Sm. Iftiquar et Ak. Barua, Control of the properties of wide bandgap a-SiC : H films prepared by RF PECVD method by varying methane flow rate, SOL EN MAT, 56(2), 1999, pp. 117-123
The role of ZnO : Al films in the performance of amorphous-silicon based tandem solar cells
Authors: Bose, S Barua, AK
Citation: S. Bose et Ak. Barua, The role of ZnO : Al films in the performance of amorphous-silicon based tandem solar cells, J PHYS D, 32(3), 1999, pp. 213-218
Improvement in the optoelectronic properties of a-SiO : H films
Authors: Das, D Iftiquar, SM Das, D Barua, AK
Citation: D. Das et al., Improvement in the optoelectronic properties of a-SiO : H films, J MATER SCI, 34(5), 1999, pp. 1051-1054
Intrinsic hydrogenated microcrystalline silicon oxide films prepared by RFglow discharge
Authors: Das, D Mandal, S Barua, AK
Citation: D. Das et al., Intrinsic hydrogenated microcrystalline silicon oxide films prepared by RFglow discharge, J MAT SCI L, 17(24), 1998, pp. 2097-2100
Risultati: 1-13 |