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Results: 1-9 |
Results: 9
Kinetic aspects of the growth of platelets and voids in H implanted Si
Authors: Grisolia, J Cristiano, F Ben Assayag, G Claverie, A
Citation: J. Grisolia et al., Kinetic aspects of the growth of platelets and voids in H implanted Si, NUCL INST B, 178, 2001, pp. 160-164
Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon
Authors: Colombeau, B Cristiano, F Altibelli, A Bonafos, C Ben Assayag, G Claverie, A
Citation: B. Colombeau et al., Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon, APPL PHYS L, 78(7), 2001, pp. 940-942
Thermal evolution of extended defects in implanted Si: impact on dopant diffusion
Authors: Claverie, A Colombeau, B Ben Assayag, G Bonafos, C Cristiano, F Omri, M de Mauduit, B
Citation: A. Claverie et al., Thermal evolution of extended defects in implanted Si: impact on dopant diffusion, MAT SC S PR, 3(4), 2000, pp. 269-277
Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO2
Authors: Bonafos, C Garrido, B Lopez, M Perez-Rodriguez, A Morante, JR Kihn, Y Ben Assayag, G Claverie, A
Citation: C. Bonafos et al., Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO2, MAT SCI E B, 69, 2000, pp. 380-385
Kinetic aspects of the growth of hydrogen induced platelets in SiC
Authors: Grisolia, J Cristiano, F De Mauduit, B Ben Assayag, G Letertre, F Aspar, B Di Cioccio, L Claverie, A
Citation: J. Grisolia et al., Kinetic aspects of the growth of hydrogen induced platelets in SiC, J APPL PHYS, 87(12), 2000, pp. 8415-8419
A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si
Authors: Grisolia, J Ben Assayag, G Claverie, A Aspar, B Lagahe, C Laanab, L
Citation: J. Grisolia et al., A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si, APPL PHYS L, 76(7), 2000, pp. 852-854
An electron microscopy study of the growth of Ge nanoparticles in SiO2
Authors: Bonafos, C Garrido, B Lopez, M Perez-Rodriguez, A Morante, JR Kihn, Y Ben Assayag, G Claverie, A
Citation: C. Bonafos et al., An electron microscopy study of the growth of Ge nanoparticles in SiO2, APPL PHYS L, 76(26), 2000, pp. 3962-3964
Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion
Authors: Claverie, A Giles, LF Omri, M de Mauduit, B Ben Assayag, G Mathiot, D
Citation: A. Claverie et al., Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion, NUCL INST B, 147(1-4), 1999, pp. 1-12
TEM studies of the defects introduced by ion implantation in SiC
Authors: Grisolia, J de Mauduit, B Gimbert, J Billon, T Ben Assayag, G Bourgerette, C Claverie, A
Citation: J. Grisolia et al., TEM studies of the defects introduced by ion implantation in SiC, NUCL INST B, 147(1-4), 1999, pp. 62-67
Risultati: 1-9 |