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Results: 1-14 |
Results: 14
Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies
Authors: Liliental-Weber, Z Benamara, M Washburn, J Domagala, JZ Bak-Misiuk, J Piner, EL Roberts, JC Bedair, SM
Citation: Z. Liliental-weber et al., Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies, J ELEC MAT, 30(4), 2001, pp. 439-444
Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer
Authors: Bourret-Courchesne, ED Yu, KM Benamara, M Liliental-Weber, Z Washburn, J
Citation: Ed. Bourret-courchesne et al., Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer, J ELEC MAT, 30(11), 2001, pp. 1417-1420
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
Authors: Fang, ZQ Look, DC Jasinski, J Benamara, M Liliental-Weber, Z Molnar, RJ
Citation: Zq. Fang et al., Evolution of deep centers in GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 78(3), 2001, pp. 332-334
Effect of the doping and the Al content on the microstructure and morphology of thin AlxGa1-xN layers grown by MOCVD.
Authors: Mazur, JH Benamara, M Liliental-Weber, Z Swider, W Washburn, J Eiting, CJ Dupuis, RD
Citation: Jh. Mazur et al., Effect of the doping and the Al content on the microstructure and morphology of thin AlxGa1-xN layers grown by MOCVD., MRS I J N S, 5, 2000, pp. NIL_252-NIL_257
The role of the multi buffer layer technique on the structural quality of GaN
Authors: Benamara, M Liliental-Weber, Z Mazur, JH Swider, W Washburn, J Iwaya, M Akasaki, I Amano, H
Citation: M. Benamara et al., The role of the multi buffer layer technique on the structural quality of GaN, MRS I J N S, 5, 2000, pp. NIL_341-NIL_346
Mg segregation, difficulties of P-doping in GaN
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Dupuis, RD Eiting, CJ
Citation: Z. Liliental-weber et al., Mg segregation, difficulties of P-doping in GaN, MRS I J N S, 5, 2000, pp. NIL_430-NIL_435
Study of high-quality GaN grown by OMVPE using an intermediate layer
Authors: Benamara, M Liliental-Weber, Z Kellermann, S Swider, W Washburn, J Mazur, J Bourret-Courchesne, ED
Citation: M. Benamara et al., Study of high-quality GaN grown by OMVPE using an intermediate layer, J CRYST GR, 218(2-4), 2000, pp. 447-450
Reduction of threading dislocation density in GaN using an intermediate temperature interlayer
Authors: Bourret-Courchesne, ED Kellermann, S Yu, KM Benamara, M Liliental-Weber, Z Washburn, J Irvine, SJC Stafford, A
Citation: Ed. Bourret-courchesne et al., Reduction of threading dislocation density in GaN using an intermediate temperature interlayer, APPL PHYS L, 77(22), 2000, pp. 3562-3564
Electron beam and optical depth profiling of quasibulk GaN
Authors: Chernyak, L Osinsky, A Nootz, G Schulte, A Jasinski, J Benamara, M Liliental-Weber, Z Look, DC Molnar, RJ
Citation: L. Chernyak et al., Electron beam and optical depth profiling of quasibulk GaN, APPL PHYS L, 77(17), 2000, pp. 2695-2697
Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Wong, MM Dupuis, RD Liliental-Weber, Z Benamara, M
Citation: Hk. Kwon et al., Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition, APPL PHYS L, 77(16), 2000, pp. 2503-2505
Ordering in bulk GaN : Mg samples: defects caused by Mg doping
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Dupuis, RD Eiting, CJ
Citation: Z. Liliental-weber et al., Ordering in bulk GaN : Mg samples: defects caused by Mg doping, PHYSICA B, 274, 1999, pp. 124-129
The interface structure in directly bonded silicon crystals studied by synchrotron X-ray diffraction
Authors: Nielsen, M Feidenhans'l, R Howes, PB Vedde, J Rasmussen, K Benamara, M Grey, F
Citation: M. Nielsen et al., The interface structure in directly bonded silicon crystals studied by synchrotron X-ray diffraction, SURF SCI, 442(1), 1999, pp. L989-L994
Spontaneous ordering in bulk GaN : Mg samples
Authors: Liliental-Weber, Z Benamara, M Washburn, J Grzegory, I Porowski, S
Citation: Z. Liliental-weber et al., Spontaneous ordering in bulk GaN : Mg samples, PHYS REV L, 83(12), 1999, pp. 2370-2373
Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Lambert, DJH Eiting, CJ Dupuis, RD
Citation: Z. Liliental-weber et al., Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition, APPL PHYS L, 75(26), 1999, pp. 4159-4161
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