Authors:
Benemanskaya, GV
Daineka, DV
Frank-Kamenetskaya, GE
Citation: Gv. Benemanskaya et al., The electronic properties of the Cs/GaAs(100) interface and the formation of metastable Cs clusters, J EXP TH PH, 92(2), 2001, pp. 297-303
Citation: Gv. Benemanskaya et Vs. Vikhnin, Origin of the successive metal-insulator-metal transitions induced by K and Cs adsorption on the Si(111)7x7 surface, PHYS LOW-D, 1-2, 2001, pp. 9-19
Authors:
Benemanskaya, GV
Evtikhiev, VP
Frank-Kamenetskaya, GE
Citation: Gv. Benemanskaya et al., Electronic properties of cesium ultrathin coatings on the Ga-rich GaAs(100) surface, PHYS SOL ST, 42(2), 2000, pp. 366-370
Authors:
Benemanskaya, GV
Daineka, RV
Frank-Kamenetskaya, GE
Citation: Gv. Benemanskaya et al., Development of electronic band structure of the K-adsorbed Si(111)7 x 7 surface, J PHYS-COND, 11(35), 1999, pp. 6679-6684
Authors:
Benemanskaya, GV
Daineka, DV
Frank-Kamenetskaya, GE
Citation: Gv. Benemanskaya et al., Electronic properties of metal-covered silicon surfaces: Cs and Ba overlayers on the Si(100)2x1 and Si(111)7x7 surfaces, PHYS LOW-D, 1-2, 1999, pp. 97-111
Authors:
Benemanskaya, GV
Daineka, DV
Frank-Kamenetskaya, GE
Citation: Gv. Benemanskaya et al., Electronic structure and local interactions on a Si(100)2x1 surface with submonolayer Ba overlayers, J EXP TH PH, 87(6), 1998, pp. 1167-1171