Authors: Galy, P Berland, V Foucher, B Lombaert-Valot, I Guilhaume, A Chante, JP Dufrenne, S Bardy, S

Citation: P. Galy et al., Numerical investigation for a Grounded Gate NMOS Transistor under electrostatic discharge (ESD) through TLP method, MICROEL REL, 40(8-10), 2000, pp. 1473-1477