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Results: 1-7 |
Results: 7

Authors: Missaoui, A Saadoun, M Boufaden, T Bessais, B Rebey, A Ezzaouia, H El Jani, B
Citation: A. Missaoui et al., Characterization of GaN layers grown on porous silicon, MAT SCI E B, 82(1-3), 2001, pp. 98-101

Authors: Matoussi, A Boufaden, T Missaoui, A Guermazi, S Bessais, B Mlik, Y El Jani, B
Citation: A. Matoussi et al., Porous silicon as an intermediate buffer layer for GaN growth on (100) Si, MICROELEC J, 32(12), 2001, pp. 995-998

Authors: Elhouichet, H Oueslati, M Bessais, B Ezzaouia, H Ben Younes, O
Citation: H. Elhouichet et al., Laser induced degradation of photoluminescence intensity of porous silicon, J POROUS MA, 7(1-3), 2000, pp. 307-310

Authors: Bessais, B Ezzaouia, H Boujmil, MF Younes, OB Elhouichet, H Chihi, A Oueslati, M Bennaceur, R
Citation: B. Bessais et al., Correlation of photoluminescence and optical absorption spectra of porous silicon, J POROUS MA, 7(1-3), 2000, pp. 311-314

Authors: Missaoui, A Saadoun, M Ezzaouia, H Bessais, B Boufaden, T Rebey, A El Jani, B
Citation: A. Missaoui et al., Growth of GaN films on porous silicon by MOVPE, PHYS ST S-A, 182(1), 2000, pp. 189-193

Authors: Bessais, B Ben Younes, O Ezzaouia, H Mliki, N Boujmil, MF Oueslati, M Bennaceur, R
Citation: B. Bessais et al., Morphological changes in porous silicon nanostructures: non-conventional photoluminescence shifts and correlation with optical absorption, J LUMINESC, 90(3-4), 2000, pp. 101-109

Authors: Saadoun, M Ezzaouia, H Bessais, B Boujmil, MF Bennaceur, R
Citation: M. Saadoun et al., Formation of porous silicon for large-area silicon solar cells: A new method, SOL EN MAT, 59(4), 1999, pp. 377-385
Risultati: 1-7 |