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Results: 1-11 |
Results: 11

Authors: Sgiarovello, C Binggeli, N Baldereschi, A
Citation: C. Sgiarovello et al., Influence of surface morphology on the Si(100) and (111) ionization potentials - art. no. 195305, PHYS REV B, 6419(19), 2001, pp. 5305

Authors: Binggeli, N Ferrara, P Baldereschi, A
Citation: N. Binggeli et al., Band-offset trends in nitride heterojunctions - art. no. 245306, PHYS REV B, 6324(24), 2001, pp. 5306

Authors: Rubini, S Pelucchi, E Lazzarino, M Kumar, D Franciosi, A Berthod, C Binggeli, N Baldereschi, A
Citation: S. Rubini et al., Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) - art. no. 235307, PHYS REV B, 6323(23), 2001, pp. 5307

Authors: Bardi, J Binggeli, N Baldereschi, A
Citation: J. Bardi et al., Existence of localized interface states in metal/GaAs(100) junctions: Au versus Al contacts, PHYS REV B, 61(8), 2000, pp. 5416-5422

Authors: Dean, DW Wentzcovitch, RM Keskar, N Chelikowsky, JR Binggeli, N
Citation: Dw. Dean et al., Pressure-induced amorphization in crystalline silica: Soft phonon modes and shear instabilities in coesite, PHYS REV B, 61(5), 2000, pp. 3303-3309

Authors: Fall, CJ Binggeli, N Baldereschi, A
Citation: Cj. Fall et al., Work-function anisotropy in noble metals: Contributions from d states and effects of the surface atomic structure, PHYS REV B, 61(12), 2000, pp. 8489-8495

Authors: Berthod, C Binggeli, N Baldereschi, A
Citation: C. Berthod et al., Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs, J VAC SCI B, 18(4), 2000, pp. 2114-2118

Authors: Chelikowsky, JR Chadi, DJ Binggeli, N
Citation: Jr. Chelikowsky et al., Oxygen configurations in silica, PHYS REV B, 62(4), 2000, pp. R2251-R2254

Authors: Di Ventra, M Berthod, C Binggeli, N
Citation: M. Di Ventra et al., Koster-Slater model for the interface-state problem, PHYS REV B, 62(16), 2000, pp. R10622-R10625

Authors: Fall, CJ Binggeli, N Baldereschi, A
Citation: Cj. Fall et al., Deriving accurate work functions from thin-slab calculations, J PHYS-COND, 11(13), 1999, pp. 2689-2696

Authors: Bardi, J Binggeli, N Baldereschi, A
Citation: J. Bardi et al., Structural and compositional dependences of the Schottky barrier in Al/Ga1-xAlxAs(100) and (110) junctions, PHYS REV B, 59(12), 1999, pp. 8054-8064
Risultati: 1-11 |