AAAAAA
Results:
1-11
|
Results: 11
Authors:
Sgiarovello, C
Binggeli, N
Baldereschi, A
Citation: C. Sgiarovello et al., Influence of surface morphology on the Si(100) and (111) ionization potentials - art. no. 195305, PHYS REV B, 6419(19), 2001, pp. 5305
Authors:
Binggeli, N
Ferrara, P
Baldereschi, A
Citation: N. Binggeli et al., Band-offset trends in nitride heterojunctions - art. no. 245306, PHYS REV B, 6324(24), 2001, pp. 5306
Authors:
Rubini, S
Pelucchi, E
Lazzarino, M
Kumar, D
Franciosi, A
Berthod, C
Binggeli, N
Baldereschi, A
Citation: S. Rubini et al., Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) - art. no. 235307, PHYS REV B, 6323(23), 2001, pp. 5307
Authors:
Bardi, J
Binggeli, N
Baldereschi, A
Citation: J. Bardi et al., Existence of localized interface states in metal/GaAs(100) junctions: Au versus Al contacts, PHYS REV B, 61(8), 2000, pp. 5416-5422
Authors:
Dean, DW
Wentzcovitch, RM
Keskar, N
Chelikowsky, JR
Binggeli, N
Citation: Dw. Dean et al., Pressure-induced amorphization in crystalline silica: Soft phonon modes and shear instabilities in coesite, PHYS REV B, 61(5), 2000, pp. 3303-3309
Authors:
Fall, CJ
Binggeli, N
Baldereschi, A
Citation: Cj. Fall et al., Work-function anisotropy in noble metals: Contributions from d states and effects of the surface atomic structure, PHYS REV B, 61(12), 2000, pp. 8489-8495
Authors:
Berthod, C
Binggeli, N
Baldereschi, A
Citation: C. Berthod et al., Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs, J VAC SCI B, 18(4), 2000, pp. 2114-2118
Authors:
Chelikowsky, JR
Chadi, DJ
Binggeli, N
Citation: Jr. Chelikowsky et al., Oxygen configurations in silica, PHYS REV B, 62(4), 2000, pp. R2251-R2254
Authors:
Di Ventra, M
Berthod, C
Binggeli, N
Citation: M. Di Ventra et al., Koster-Slater model for the interface-state problem, PHYS REV B, 62(16), 2000, pp. R10622-R10625
Authors:
Fall, CJ
Binggeli, N
Baldereschi, A
Citation: Cj. Fall et al., Deriving accurate work functions from thin-slab calculations, J PHYS-COND, 11(13), 1999, pp. 2689-2696
Authors:
Bardi, J
Binggeli, N
Baldereschi, A
Citation: J. Bardi et al., Structural and compositional dependences of the Schottky barrier in Al/Ga1-xAlxAs(100) and (110) junctions, PHYS REV B, 59(12), 1999, pp. 8054-8064
Risultati:
1-11
|