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Results:
1-8
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Results: 8
Authors:
Bittencourt, C
Citation: C. Bittencourt, Influence of substrate temperature on formation of an SiC buffer layer by reaction of Si(100) with silane-methane plasma, SEMIC SCI T, 15(12), 2000, pp. 1115-1118
Authors:
Soares, EA
Bittencourt, C
Nascimento, VB
de Carvalho, VE
de Castilho, CMC
McConville, CF
de Carvalho, AV
Woodruff, DP
Citation: Ea. Soares et al., Structure determination of Ag(111)(root 3X root 3)R30 degrees-Sb by low-energy electron diffraction, PHYS REV B, 61(20), 2000, pp. 13983-13987
Authors:
Bittencourt, C
Citation: C. Bittencourt, Characterization of SiC buffer layer formation by reaction of Si(100) surface with methane plus hydrogen plasma, SURF INT AN, 30(1), 2000, pp. 603-606
Authors:
Bittencourt, C
Citation: C. Bittencourt, Determination of the valence band offset of a mu c-C/c-Si(100) heterojunction using low energy yield spectroscopy, J PHYS-COND, 11(4), 1999, pp. 955-961
Authors:
Bittencourt, C
Citation: C. Bittencourt, Low-energy yield spectroscopy measurements applied to determine valence band line-up at interfaces with non-homogeneous overlayers, J PHYS-COND, 11(18), 1999, pp. 3761-3768
Authors:
Nascimento, VB
de Carvalho, VE
de Castilho, CMC
Soares, EA
Bittencourt, C
Woodruff, DP
Citation: Vb. Nascimento et al., The simulated annealing global search algorithm applied to the crystallography of surfaces by LEED, SURF REV L, 6(5), 1999, pp. 651-661
Authors:
Bittencourt, C
Citation: C. Bittencourt, Formation of a SiC buffer layer by reaction of Si (100) with methane and hydrogen plasma, J PHYS D, 32(19), 1999, pp. 2478-2482
Authors:
Bittencourt, C
Citation: C. Bittencourt, Reaction of Si (100) with silane-methane low-power plasma: SiC buffer-layer formation, J APPL PHYS, 86(8), 1999, pp. 4643-4648
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