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Results: 1-9 |
Results: 9
Tungstophosphoric and tungstosilicic acids on carbon as acidic catalysts
Authors: Chimienti, ME Pizzio, LR Caceres, CV Blanco, MN
Citation: Me. Chimienti et al., Tungstophosphoric and tungstosilicic acids on carbon as acidic catalysts, APP CATAL A, 208(1-2), 2001, pp. 7-19
Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique
Authors: Blanco, MN Redondo, E Martil, I Gonzalez-Diaz, G
Citation: Mn. Blanco et al., Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique, SEMIC SCI T, 15(8), 2000, pp. 823-828
N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance
Authors: Redondo, E Blanco, MN Martil, I Gonzalez-Diaz, G
Citation: E. Redondo et al., N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance, MICROEL REL, 40(4-5), 2000, pp. 837-840
High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
Authors: Blanco, MN Redondo, E Calle, F Martil, I Gonzalez-Diaz, G
Citation: Mn. Blanco et al., High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices, J APPL PHYS, 87(7), 2000, pp. 3478-3482
Catalysts based on supported 12-molybdophosphoric acid
Authors: Vazquez, PG Blanco, MN Caceres, CV
Citation: Pg. Vazquez et al., Catalysts based on supported 12-molybdophosphoric acid, CATAL LETT, 60(4), 1999, pp. 205-215
Electrical characterization of Si+ and Si+/P+ implanted N+PIn0.53Ga0.47As junctions
Authors: Blanco, MN Redondo, E Leon, C Santamaria, J Gonzalez-Diaz, G
Citation: Mn. Blanco et al., Electrical characterization of Si+ and Si+/P+ implanted N+PIn0.53Ga0.47As junctions, J MAT S-M E, 10(5-6), 1999, pp. 425-428
Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
Authors: Blanco, MN Redondo, E Martil, I Gonzalez-Diaz, G
Citation: Mn. Blanco et al., Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing, SEMIC SCI T, 14(7), 1999, pp. 628-631
Equilibrium adsorption of 11-tungstophosphate anion on different supports
Authors: Pizzio, LR Caceres, CV Blanco, MN
Citation: Lr. Pizzio et al., Equilibrium adsorption of 11-tungstophosphate anion on different supports, APPL SURF S, 151(1-2), 1999, pp. 91-101
Shallow junctions in p-In.53Ga.47As by ion implantation
Authors: Blanco, MN Redondo, E Leon, C Santamaria, J Gonzalez-Diaz, G
Citation: Mn. Blanco et al., Shallow junctions in p-In.53Ga.47As by ion implantation, NUCL INST B, 147(1-4), 1999, pp. 166-170
Risultati: 1-9 |