Authors:
Blanco, MN
Redondo, E
Martil, I
Gonzalez-Diaz, G
Citation: Mn. Blanco et al., Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique, SEMIC SCI T, 15(8), 2000, pp. 823-828
Authors:
Blanco, MN
Redondo, E
Calle, F
Martil, I
Gonzalez-Diaz, G
Citation: Mn. Blanco et al., High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices, J APPL PHYS, 87(7), 2000, pp. 3478-3482
Authors:
Blanco, MN
Redondo, E
Leon, C
Santamaria, J
Gonzalez-Diaz, G
Citation: Mn. Blanco et al., Electrical characterization of Si+ and Si+/P+ implanted N+PIn0.53Ga0.47As junctions, J MAT S-M E, 10(5-6), 1999, pp. 425-428