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Results:
1-14
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Results: 14
Authors:
Chang, EK
Blase, X
Louie, SG
Citation: Ek. Chang et al., Quasiparticle band structure of lanthanum hydride - art. no. 155108, PHYS REV B, 6415(15), 2001, pp. 5108
Authors:
Connetable, D
Timoshevskii, V
Artacho, E
Blase, X
Citation: D. Connetable et al., Tailoring band gap and hardness by intercalation: An ab initio study of I-8@Si-46 and related doped clathrates - art. no. 206405, PHYS REV L, 8720(20), 2001, pp. 6405
Quasiparticle effects on tunneling currents: A study of C2H4 adsorbed on the Si(001)-(2 x 1) surface
Authors:
Rignanese, GM
Blase, X
Louie, SG
Citation: Gm. Rignanese et al., Quasiparticle effects on tunneling currents: A study of C2H4 adsorbed on the Si(001)-(2 x 1) surface, PHYS REV L, 86(10), 2001, pp. 2110-2113
Authors:
Blase, X
Citation: X. Blase, Properties of composite BxCyNz nanotubes and related heterojunctions, COMP MAT SC, 17(2-4), 2000, pp. 107-114
Authors:
Gallego, S
Avila, J
Martin, M
Blase, X
Taleb, A
Dumas, P
Asensio, MC
Citation: S. Gallego et al., Electronic structure of the ideally H-terminated Si(111)-(1X1) surface, PHYS REV B, 61(19), 2000, pp. 12628-12631
Authors:
Blase, X
Lin, KR
Canning, A
Louie, SG
Chrzan, DC
Citation: X. Blase et al., Structure and energy of the 90 degrees partial dislocation in diamond: A combined ab initio and elasticity theory analysis, PHYS REV L, 84(25), 2000, pp. 5780-5783
Authors:
Pellarin, M
Ray, C
Lerme, J
Vialle, JL
Broyer, M
Blase, X
Keghelian, P
Melinon, P
Perez, A
Citation: M. Pellarin et al., Production and stability of silicon-doped heterofullerenes, EUR PHY J D, 9(1-4), 1999, pp. 49-54
Authors:
Charlier, JC
Blase, X
De Vita, A
Car, R
Citation: Jc. Charlier et al., Microscopic growth mechanisms for carbon and boron-nitride nanotubes, APPL PHYS A, 68(3), 1999, pp. 267-273
Authors:
De Vita, A
Charlier, JC
Blase, X
Car, R
Citation: A. De Vita et al., Electronic structure at carbon nanotube tips, APPL PHYS A, 68(3), 1999, pp. 283-286
Authors:
Blase, X
Charlier, JC
De Vita, A
Car, R
Citation: X. Blase et al., Structural and electronic properties of composite BxCyNz nanotubes and heterojunctions, APPL PHYS A, 68(3), 1999, pp. 293-300
Authors:
San-Miguel, A
Keghelian, P
Blase, X
Melinon, P
Perez, A
Itie, JP
Polian, A
Reny, E
Cros, C
Pouchard, M
Citation: A. San-miguel et al., High pressure behavior of silicon clathrates: A new class of low compressibility materials, PHYS REV L, 83(25), 1999, pp. 5290-5293
Authors:
Blase, X
Charlier, JC
De Vita, A
Car, R
Redlich, P
Terrones, M
Hsu, WK
Terrones, H
Carroll, DL
Ajayan, PM
Citation: X. Blase et al., Boron-mediated growth of long helicity-selected carbon nanotubes, PHYS REV L, 83(24), 1999, pp. 5078-5081
Authors:
Pellarin, M
Ray, C
Lerme, J
Vialle, JL
Broyer, M
Blase, X
Keghelian, P
Melinon, P
Perez, A
Citation: M. Pellarin et al., Photolysis experiments on SiC mixed clusters: From silicon carbide clusters to silicon-doped fullerenes, J CHEM PHYS, 110(14), 1999, pp. 6927-6938
Authors:
Melinon, P
Keghelian, P
Blase, X
Le Brusc, J
Perez, A
Reny, E
Cros, C
Pouchard, M
Citation: P. Melinon et al., Electronic signature of the pentagonal rings in silicon clathrate phases: Comparison with cluster-assembled films, PHYS REV B, 58(19), 1998, pp. 12590-12593
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