Authors:
Senn, HM
Deubel, DV
Blochl, PE
Togni, A
Frenking, G
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Citation: Pe. Blochl et Jh. Stathis, Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs, PHYSICA B, 274, 1999, pp. 1022-1026