AAAAAA

   
Results: 1-9 |
Results: 9
Defect analysis of n-type silicon strained layers
Authors: Simoen, E Loo, R Roussel, P Caymax, M Bender, H Claeys, C Herzog, HJ Blondeel, A Clauws, P
Citation: E. Simoen et al., Defect analysis of n-type silicon strained layers, MAT SC S PR, 4(1-3), 2001, pp. 225-227
Lifetime measurements on Ge wafers for Ge/GaAs solar cells - chemical surface passivation
Authors: Blondeel, A Clauws, P Depuydt, B
Citation: A. Blondeel et al., Lifetime measurements on Ge wafers for Ge/GaAs solar cells - chemical surface passivation, MAT SC S PR, 4(1-3), 2001, pp. 301-303
Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts
Authors: Zhu, SY Detavernier, C Van Meirhaeghe, RL Cardon, F Blondeel, A Clauws, P Ru, GP Li, BZ
Citation: Sy. Zhu et al., Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts, SEMIC SCI T, 16(2), 2001, pp. 83-90
Acute generalized exanthematous pustulosis induced by amoxycillin with clavulanate
Authors: de Thier, F Blondeel, A Song, M
Citation: F. De Thier et al., Acute generalized exanthematous pustulosis induced by amoxycillin with clavulanate, CONTACT DER, 44(2), 2001, pp. 114-115
Tin doping of silicon for controlling oxygen precipitation and radiation hardness
Authors: Claeys, C Simoen, E Neimash, VB Kraitchinskii, A Kras'ko, M Puzenko, O Blondeel, A Clauws, P
Citation: C. Claeys et al., Tin doping of silicon for controlling oxygen precipitation and radiation hardness, J ELCHEM SO, 148(12), 2001, pp. G738-G745
Quantitative optical variants of deep level transient spectroscopy: application to high purity germanium
Authors: Blondeel, A Clauws, P
Citation: A. Blondeel et P. Clauws, Quantitative optical variants of deep level transient spectroscopy: application to high purity germanium, MAT SCI E B, 71, 2000, pp. 233-237
Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon
Authors: Simoen, E Claeys, C Neimash, VB Kraitchinskii, A Krasko, N Puzenko, O Blondeel, A Clauws, P
Citation: E. Simoen et al., Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon, APPL PHYS L, 76(20), 2000, pp. 2838-2840
Deep defects in n-type high-purity germanium: quantification of optical variants of deep level transient spectroscopy
Authors: Blondeel, A Clauws, P
Citation: A. Blondeel et P. Clauws, Deep defects in n-type high-purity germanium: quantification of optical variants of deep level transient spectroscopy, PHYSICA B, 274, 1999, pp. 584-588
Photoinduced current transient spectroscopy of deep defects in n-type ultrapure germanium
Authors: Blondeel, A Clauws, P
Citation: A. Blondeel et P. Clauws, Photoinduced current transient spectroscopy of deep defects in n-type ultrapure germanium, J APPL PHYS, 86(2), 1999, pp. 940-945
Risultati: 1-9 |