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Results:
1-15
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Results: 15
Authors:
Krukowski, S
Bockowski, M
Lucznik, B
Grzegory, I
Porowski, S
Suski, T
Romanowski, Z
Citation: S. Krukowski et al., High-nitrogen-pressure growth of GaN single crystals: doping and physical properties, J PHYS-COND, 13(40), 2001, pp. 8881-8890
Authors:
Bockowski, M
Citation: M. Bockowski, Growth and doping of GaN and AlN single crystals under high nitrogen pressure, CRYST RES T, 36(8-10), 2001, pp. 771-787
Authors:
Suski, T
Litwin-Staszewska, E
Perlin, P
Wisniewski, P
Teisseyre, H
Grzegory, I
Bockowski, M
Porowski, S
Saarinen, K
Nissila, J
Citation: T. Suski et al., Optical and electrical properties of Be doped GaN bulk crystals, J CRYST GR, 230(3-4), 2001, pp. 368-371
Authors:
Litwin-Staszewska, E
Suski, T
Piotrzkowski, R
Grzegory, I
Bockowski, M
Robert, JL
Konczewicz, L
Wasik, D
Kaminska, E
Cote, D
Clerjaud, B
Citation: E. Litwin-staszewska et al., Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing, J APPL PHYS, 89(12), 2001, pp. 7960-7965
Authors:
Teisseyre, H
Ochalski, TJ
Perlin, P
Suski, T
Leszczynski, M
Grzegory, I
Bockowski, M
Lucznik, B
Bugajski, M
Palczewska, M
Gebicki, W
Citation: H. Teisseyre et al., The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure, HIGH PR RES, 18(1-6), 2000, pp. 35-39
Authors:
Teisseyre, H
Suski, T
Perlin, P
Grzegory, I
Leszczynski, M
Bockowski, M
Porowski, S
Freitas, JA
Henry, RL
Wickenden, AE
Koleske, DD
Citation: H. Teisseyre et al., Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies, PHYS REV B, 62(15), 2000, pp. 10151-10157
Authors:
Palczewska, M
Wolos, A
Kaminska, M
Grzegory, I
Bockowski, M
Krukowski, S
Suski, T
Porowski, S
Citation: M. Palczewska et al., Electron spin resonance of erbium in gallium nitride, SOL ST COMM, 114(1), 2000, pp. 39-42
Authors:
Bockowski, M
Citation: M. Bockowski, High pressure direct synthesis of III-V nitrides, PHYSICA B, 265(1-4), 1999, pp. 1-5
Authors:
Danilchenko, B
Bockowski, M
Grzegory, I
Guzenko, V
Paszkiewicz, T
Suski, T
Citation: B. Danilchenko et al., Propagation of phonon pulses in crystalline GaN, PHYSICA B, 263, 1999, pp. 727-729
Authors:
Grzegory, I
Kozubowski, JA
Borysiuk, J
Weyher, JL
Bockowski, M
Lucznik, B
Porowski, S
Citation: I. Grzegory et al., Micro defects in nearly dislocation free GaN doped with Mg during high pressure crystallization, PHYS ST S-B, 216(1), 1999, pp. 537-540
Authors:
Suski, T
Perlin, P
Pietraszko, A
Leszczynski, M
Bockowski, M
Grzegory, I
Porowski, S
Citation: T. Suski et al., (GaMg)N - New wide band gap semiconductor, PHYS ST S-A, 176(1), 1999, pp. 343-346
Authors:
Suski, T
Perlin, P
Pietraszko, A
Leszczynski, M
Bockowski, M
Grzegory, I
Porowski, S
Citation: T. Suski et al., (GaMg)N new semiconductor grown at high pressure of nitrogen, J CRYST GR, 207(1-2), 1999, pp. 27-29
Authors:
Prystawko, P
Leszczynski, M
Sliwinski, A
Teisseyre, H
Suski, T
Bockowski, M
Porowski, S
Domagala, J
Kirchner, C
Pelzmann, A
Schauler, M
Kamp, M
Citation: P. Prystawko et al., Epitaxy of ternary nitrides on GaN single crystals, J CRYST GR, 199, 1999, pp. 1061-1065
Authors:
Prystawko, P
Leszczynski, M
Beaumont, B
Gibart, P
Frayssinet, E
Knap, W
Wisniewski, P
Bockowski, M
Suski, T
Porowski, S
Citation: P. Prystawko et al., Doping of homoepitaxial GaN layers, PHYS ST S-B, 210(2), 1998, pp. 437-443
Authors:
Witek, A
Bockowski, M
Presz, A
Wroblewski, M
Krukowski, S
Wlosinski, W
Jablonski, K
Citation: A. Witek et al., Synthesis of oxygen-free aluminium nitride ceramics, J MATER SCI, 33(13), 1998, pp. 3321-3324
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