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Results: 1-8 |
Results: 8
Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power
Authors: Samukawa, S Noguchi, K Colonell, JI Bogart, KHA Malyshev, MV Donnelly, VM
Citation: S. Samukawa et al., Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power, J VAC SCI B, 18(2), 2000, pp. 834-840
The role of feedgas chemistry, mask material, and processing parameters inprofile evolution during plasma etching of Si(100)
Authors: Lane, JM Bogart, KHA Klemens, FP Lee, JTC
Citation: Jm. Lane et al., The role of feedgas chemistry, mask material, and processing parameters inprofile evolution during plasma etching of Si(100), J VAC SCI A, 18(5), 2000, pp. 2067-2079
Feature evolution during plasma etching. II. Polycrystalline silicon etching
Authors: Lane, JM Klemens, FP Bogart, KHA Malyshev, MV Lee, JTC
Citation: Jm. Lane et al., Feature evolution during plasma etching. II. Polycrystalline silicon etching, J VAC SCI A, 18(1), 2000, pp. 188-196
Mask charging and profile evolution during chlorine plasma etching of silicon
Authors: Bogart, KHA Klemens, FP Malyshev, MV Colonell, JI Donnelly, VM Lee, JTC Lane, JM
Citation: Kha. Bogart et al., Mask charging and profile evolution during chlorine plasma etching of silicon, J VAC SCI A, 18(1), 2000, pp. 197-206
Diagnostics of inductively coupled chlorine plasmas: Measurement of Cl-2(+) and Cl+ densities
Authors: Malyshev, MV Fuller, NCM Bogart, KHA Donnelly, VM Herman, IP
Citation: Mv. Malyshev et al., Diagnostics of inductively coupled chlorine plasmas: Measurement of Cl-2(+) and Cl+ densities, J APPL PHYS, 88(5), 2000, pp. 2246-2251
Composition of trench sidewalls and bottoms for SiO2-masked Si(100) etchedin Cl-2 plasmas
Authors: Bogart, KHA Donnelly, VM
Citation: Kha. Bogart et Vm. Donnelly, Composition of trench sidewalls and bottoms for SiO2-masked Si(100) etchedin Cl-2 plasmas, J APPL PHYS, 87(12), 2000, pp. 8351-8360
On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching
Authors: Bogart, KHA Donnelly, VM
Citation: Kha. Bogart et Vm. Donnelly, On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching, J APPL PHYS, 86(4), 1999, pp. 1822-1833
Laser-induced fluorescence and Langmuir probe determination of Cl-2(+) andCl+ absolute densities in transformer-coupled chlorine plasmas
Authors: Malyshev, MV Fuller, NCM Bogart, KHA Donnelly, VM Herman, IP
Citation: Mv. Malyshev et al., Laser-induced fluorescence and Langmuir probe determination of Cl-2(+) andCl+ absolute densities in transformer-coupled chlorine plasmas, APPL PHYS L, 74(12), 1999, pp. 1666-1668
Risultati: 1-8 |