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Results: 1-8 |
Results: 8
Edge and vertical surface emitting lasers around 2.0-2.5 mu m and their applications
Authors: Rouillard, Y Genty, F Perona, A Vicet, A Yarekha, DA Boissier, G Grech, P Baranov, AN Alibert, C
Citation: Y. Rouillard et al., Edge and vertical surface emitting lasers around 2.0-2.5 mu m and their applications, PHI T ROY A, 359(1780), 2001, pp. 581-597
MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m
Authors: Wilk, A Fraisse, B Christol, P Boissier, G Grech, P El Gazouli, M Rouillard, Y Baranov, AN Joullie, A
Citation: A. Wilk et al., MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m, J CRYST GR, 227, 2001, pp. 586-590
MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers
Authors: Wilk, A Genty, F Fraisse, B Boissier, G Grech, P El Gazouli, M Christol, P Oswald, J Simecek, T Hulicius, E Joullie, A
Citation: A. Wilk et al., MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers, J CRYST GR, 223(3), 2001, pp. 341-348
High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers
Authors: Yarekha, DA Vicet, A Perona, A Glastre, G Fraisse, B Rouillard, Y Skouri, EM Boissier, G Grech, P Joullie, A Alibert, C Baranov, AN
Citation: Da. Yarekha et al., High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers, SEMIC SCI T, 15(4), 2000, pp. 390-394
High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wavelasers emitting near 2.3 mu m
Authors: Yarekha, DA Glastre, G Perona, A Rouillard, Y Genty, F Skouri, EM Boissier, G Grech, P Joullie, A Alibert, C Baranov, AN
Citation: Da. Yarekha et al., High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wavelasers emitting near 2.3 mu m, ELECTR LETT, 36(6), 2000, pp. 537-539
Room-temperature 2.63 mu m GaInAsSb/GaSb strained quantum-well laser diodes
Authors: Cuminal, Y Baranov, AN Bec, D Grech, P Garcia, M Boissier, G Joullie, A Glastre, G Blondeau, R
Citation: Y. Cuminal et al., Room-temperature 2.63 mu m GaInAsSb/GaSb strained quantum-well laser diodes, SEMIC SCI T, 14(3), 1999, pp. 283-288
Growth and characterization of vertical cavity structures on InP with GaAsSb AlAsSb Bragg mirrors for 1.55 mu m emission
Authors: Genty, F Almuneau, G Chusseau, L Wilk, A Gaillard, S Boissier, G Grech, P Jacquet, J
Citation: F. Genty et al., Growth and characterization of vertical cavity structures on InP with GaAsSb AlAsSb Bragg mirrors for 1.55 mu m emission, J CRYST GR, 202, 1999, pp. 1024-1027
Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy
Authors: Bertru, N Baranov, AN Cuminal, Y Boissier, G Alibert, C Joullie, A Lambert, B
Citation: N. Bertru et al., Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy, J APPL PHYS, 85(3), 1999, pp. 1989-1991
Risultati: 1-8 |