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Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations
Authors:
Hook, TB Burnham, JS Bolam, RJ
Citation:
Tb. Hook et al., Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations, IBM J RES, 43(3), 1999, pp. 393-406
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