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Results:
1-7
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Results: 7
Authors:
Bollaert, S
Cordier, Y
Zaknoune, M
Parenty, T
Happy, H
Cappy, A
Citation: S. Bollaert et al., HEMT's capability for millimeter wave applications, ANN TELECOM, 56(1-2), 2001, pp. 15-26
Authors:
Zaknoune, M
Cordier, Y
Bollaert, S
Ferre, D
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs, SOL ST ELEC, 44(9), 2000, pp. 1685-1688
Authors:
Bollaert, S
Cordier, Y
Zaknoune, M
Happy, H
Hoel, V
Lepilliet, S
Theron, D
Cappy, A
Citation: S. Bollaert et al., The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter, SOL ST ELEC, 44(6), 2000, pp. 1021-1027
Authors:
Cordier, Y
Bollaert, S
Zaknoune, M
Dipersio, J
Ferre, D
Citation: Y. Cordier et al., InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: Influence of indium content on material properties and device performance, JPN J A P 1, 38(2B), 1999, pp. 1164-1168
Authors:
Bollaert, S
Cordier, Y
Hoel, V
Zaknoune, M
Happy, H
Lepilliet, S
Cappy, A
Citation: S. Bollaert et al., Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate, IEEE ELEC D, 20(3), 1999, pp. 123-125
Authors:
Zaknoune, M
Cordier, Y
Bollaert, S
Ferre, D
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer, ELECTR LETT, 35(19), 1999, pp. 1670-1671
Authors:
Gaquiere, C
Bollaert, S
Zaknoune, M
Cordier, Y
Theron, D
Crosnier, Y
Citation: C. Gaquiere et al., Influence on power performances at 60GHz of indium composition in metamorphic HEMTs, ELECTR LETT, 35(17), 1999, pp. 1489-1491
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1-7
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