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Results: 1-15 |
Results: 15
300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO >= 6 V
Authors: Dvorak, MW Bolognesi, CR Pitts, OJ Watkins, SP
Citation: Mw. Dvorak et al., 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO >= 6 V, IEEE ELEC D, 22(8), 2001, pp. 361-363
InP/GaAsSb/InP double HBTs: A new alternative for InP-based DHB
Authors: Bolognesi, CR Matine, N Dvorak, MW Yeo, P Xu, XG Watkins, SP
Citation: Cr. Bolognesi et al., InP/GaAsSb/InP double HBTs: A new alternative for InP-based DHB, IEEE DEVICE, 48(11), 2001, pp. 2631-2639
Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb
Authors: Fink, V Chevalier, E Pitts, OJ Dvorak, MW Kavanagh, KL Bolognesi, CR Watkins, SP Hummel, S Moll, N
Citation: V. Fink et al., Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb, APPL PHYS L, 79(15), 2001, pp. 2384-2386
Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors
Authors: Dvorak, MW Matine, N Bolognesi, CR Xu, XG Watkins, SP
Citation: Mw. Dvorak et al., Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors, J VAC SCI A, 18(2), 2000, pp. 761-764
Heavily carbon-doped GaAsSb grown on InP for HBT applications
Authors: Watkins, SP Pitts, OJ Dale, C Xu, XG Dvorak, MW Matine, N Bolognesi, CR
Citation: Sp. Watkins et al., Heavily carbon-doped GaAsSb grown on InP for HBT applications, J CRYST GR, 221, 2000, pp. 59-65
High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation
Authors: Maher, H DiSanto, DW Dvorak, MW Soerensen, G Bolognesi, CR Bardwell, JA Tang, H Webb, JB
Citation: H. Maher et al., High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation, ELECTR LETT, 36(23), 2000, pp. 1969-1971
Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors
Authors: Maher, H DiSanto, DW Soerensen, G Bolognesi, CR Tang, H Webb, JB
Citation: H. Maher et al., Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors, APPL PHYS L, 77(23), 2000, pp. 3833-3835
Impact ionization effects on the microwave performance of InAs channel heterostructure field-effect transistors: the role of channel quantization
Authors: Bolognesi, CR Dvorak, MW Chow, DH
Citation: Cr. Bolognesi et al., Impact ionization effects on the microwave performance of InAs channel heterostructure field-effect transistors: the role of channel quantization, JPN J A P 1, 38(2B), 1999, pp. 1190-1194
Fabrication and characterization of InP heterojunction bipolar transistorswith emitter edges parallel to [001] and [010] crystal orientations
Authors: Matine, N Dvorak, MW Pelouard, JL Pardo, F Bolognesi, CR
Citation: N. Matine et al., Fabrication and characterization of InP heterojunction bipolar transistorswith emitter edges parallel to [001] and [010] crystal orientations, JPN J A P 1, 38(2B), 1999, pp. 1200-1203
Non-blocking collector InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction
Authors: Bolognesi, CR Matine, N Dvorak, MW Xu, XG Hu, J Watkins, SP
Citation: Cr. Bolognesi et al., Non-blocking collector InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction, IEEE ELEC D, 20(4), 1999, pp. 155-157
InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: preliminary reliability study
Authors: Bolognesi, CR Matine, N Xu, XG Soerensen, G Watkins, SP
Citation: Cr. Bolognesi et al., InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: preliminary reliability study, MICROEL REL, 39(12), 1999, pp. 1833-1838
Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET's
Authors: Bolognesi, CR Dvorak, MW Chow, DH
Citation: Cr. Bolognesi et al., Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET's, IEEE DEVICE, 46(5), 1999, pp. 826-832
Electrical stress damage reversal in nonpassivated fully self-aligned InPHBTs by ozone surface treatment
Authors: Matine, N Soerensen, G Bolognesi, CR DiSanto, D Xu, X Watkins, SP
Citation: N. Matine et al., Electrical stress damage reversal in nonpassivated fully self-aligned InPHBTs by ozone surface treatment, ELECTR LETT, 35(25), 1999, pp. 2229-2231
Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors
Authors: Xu, XG Hu, J Watkins, SP Matine, N Dvorak, MW Bolognesi, CR
Citation: Xg. Xu et al., Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors, APPL PHYS L, 74(7), 1999, pp. 976-978
Comparison of single- and double-barrier pseudomorphic InGaP/InGaAs HFETs
Authors: Xu, XG McLaughlin, S Hu, J Watkins, SP Bolognesi, CR
Citation: Xg. Xu et al., Comparison of single- and double-barrier pseudomorphic InGaP/InGaAs HFETs, J CRYST GR, 195(1-4), 1998, pp. 687-693
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