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Hays, H
Jensen, NH
de Waroux, BL
Bolt, M
Donald, R
Kalso, E
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Authors:
Mcnally, PJ
Curley, JW
Bolt, M
Reader, A
Tuomi, T
Rantamaki, R
Danilewsky, AN
DeWolf, I
Citation: Pj. Mcnally et al., Monitoring of stress reduction in shallow trench isolation CMOS structuresvia synchrotron X-ray topography, electrical data and raman spectroscopy, J MAT S-M E, 10(5-6), 1999, pp. 351-358
Authors:
McNally, PJ
Danilewsky, AN
Curley, JW
Reader, A
Rantamaki, R
Tuomi, T
Bolt, M
Taskinen, M
Citation: Pj. Mcnally et al., The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography, MICROEL ENG, 45(1), 1999, pp. 47-56