Citation: G. Witjaksono et D. Botez, Surface-emitting, single-lobe operation from second-order distributed-reflector lasers with central grating phaseshift, APPL PHYS L, 78(26), 2001, pp. 4088-4090
Citation: Rg. Ispasoiu et al., Carrier transport mechanisms in high-power InGaAs-InGaAsP-InGaP strained quantum-well lasers, IEEE J Q EL, 36(7), 2000, pp. 858-863
Citation: Ch. Chang et al., High CW power narrow-spectral width (< 1.5 angstrom) 980 nm broad-stripe distributed-feedback diode lasers, ELECTR LETT, 36(11), 2000, pp. 954-955
Citation: H. Yang et al., 1.6 W continuous-wave coherent power from large-index-step (Delta n approximate to 0.1) near-resonant, antiguided diode laser arrays, APPL PHYS L, 76(10), 2000, pp. 1219-1221
Authors:
Mirabedini, AR
Mawst, LJ
Botez, D
Marsland, RA
Citation: Ar. Mirabedini et al., High reproducibility for deep-quantum-well resonant tunnelling diodes grown by metal organic chemical vapour deposition, ELECTR LETT, 35(8), 1999, pp. 669-670
Citation: D. Botez, Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers, APPL PHYS L, 74(21), 1999, pp. 3102-3104
Authors:
Nesnidal, MP
Earles, T
Mawst, LJ
Botez, D
Buus, J
Citation: Mp. Nesnidal et al., 0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating, APPL PHYS L, 73(5), 1999, pp. 587-589