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Status of APE projects
Authors: Alfieri, R Di Renzo, R Onofri, E Bartoloni, A Battista, C Cabibbo, N Cosimi, M Lonardo, A Michelotti, A Proietti, B Rapuano, F Rossetti, D Sacco, G Tassa, S Torelli, M Vicini, P Boucaud, P Pene, O Errico, W Magazzu, G Sartori, L Schifano, F Tripiccione, R De Riso, P Petronzio, R Destri, C Frezzotti, R Marchesini, G Gensch, U Jansen, K Kretzschmann, A Leich, H Paschedag, N Pleiter, D Schwendicke, U Simma, H Sommer, R Sulanke, K Wegner, P Fucci, A Martin, B Pech, J Panizzi, E Petricola, A
Citation: R. Alfieri et al., Status of APE projects, NUCL PH B-P, 94, 2001, pp. 846-853
Preliminaries on a lattice analysis of the pion light-cone wave function: A partonic signal? art. no. 074511
Authors: Abada, A Boucaud, P Herdoiza, G Leroy, JP Micheli, J Pene, O Rodriguez-Quintero, J
Citation: A. Abada et al., Preliminaries on a lattice analysis of the pion light-cone wave function: A partonic signal? art. no. 074511, PHYS REV D, 6407(7), 2001, pp. 4511
Testing the Landau gauge operator product expansion on the lattice with a < A(2)> condensate - art. no. 114003
Authors: Boucaud, P Le Yaouanc, A Leroy, JP Micheli, J Pene, O Rodriguez-Quintero, J
Citation: P. Boucaud et al., Testing the Landau gauge operator product expansion on the lattice with a < A(2)> condensate - art. no. 114003, PHYS REV D, 6311(11), 2001, pp. 4003
Terahertz-frequency intraband absorption in semiconductor quantum dot molecules
Authors: Boucaud, P Gill, KS Williams, JB Sherwin, MS Schoenfeld, WV Petroff, PM
Citation: P. Boucaud et al., Terahertz-frequency intraband absorption in semiconductor quantum dot molecules, PHYS ST S-B, 224(2), 2001, pp. 443-446
Intersublevel emission in InAs/GaAs quantum dots
Authors: Sauvage, S Boucaud, P Brunhes, T Lemaitre, A Gerard, JM
Citation: S. Sauvage et al., Intersublevel emission in InAs/GaAs quantum dots, PHYS ST S-B, 224(2), 2001, pp. 579-583
Mid-infrared second-order nonlinear susceptibility in InAs/GaAs quantum dots
Authors: Sauvage, S Brunhes, T Boucaud, P Lemaitre, A Gerard, JM Glotin, F Prazeres, R Ortega, JM
Citation: S. Sauvage et al., Mid-infrared second-order nonlinear susceptibility in InAs/GaAs quantum dots, PHYS ST S-B, 224(2), 2001, pp. 595-598
Midinfrared photoconductivity in Ge/Si self-assembled quantum dots
Authors: Boucaud, P Brunhes, T Sauvage, S Yam, N Le Thanh, V Bouchier, D Rappaport, N Finkman, E
Citation: P. Boucaud et al., Midinfrared photoconductivity in Ge/Si self-assembled quantum dots, PHYS ST S-B, 224(1), 2001, pp. 233-236
Optical recombination from excited states in Ge/Si self-assembled quantum dots - art. no. 155310
Authors: Boucaud, P Sauvage, S Elkurdi, M Mercier, E Brunhes, T Le Thanh, V Bouchier, D Kermarrec, O Campidelli, Y Bensahel, D
Citation: P. Boucaud et al., Optical recombination from excited states in Ge/Si self-assembled quantum dots - art. no. 155310, PHYS REV B, 6415(15), 2001, pp. 5310
Second-harmonic generation resonant with s-p transition in InAs/GaAs self-assembled quantum dots - art. no. 113312
Authors: Sauvage, S Boucaud, P Brunhes, T Glotin, F Prazeres, R Ortega, JM Gerard, JM
Citation: S. Sauvage et al., Second-harmonic generation resonant with s-p transition in InAs/GaAs self-assembled quantum dots - art. no. 113312, PHYS REV B, 6311(11), 2001, pp. 3312
Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots - art. no. 033313
Authors: Yam, V Le Thanh, V Zheng, Y Boucaud, P Bouchier, D
Citation: V. Yam et al., Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots - art. no. 033313, PHYS REV B, 6303(3), 2001, pp. 3313
Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
Authors: Sauvage, S Boucaud, P Brunhes, T Immer, V Finkman, E Gerard, JM
Citation: S. Sauvage et al., Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots, APPL PHYS L, 78(16), 2001, pp. 2327-2329
Infrared second-order optical susceptibility in InAs/GaAs self-assembled quantum dots
Authors: Brunhes, T Boucaud, P Sauvage, S Lemaitre, A Gerard, JM Glotin, F Prazeres, R Ortega, JM
Citation: T. Brunhes et al., Infrared second-order optical susceptibility in InAs/GaAs self-assembled quantum dots, PHYS REV B, 61(8), 2000, pp. 5562-5570
Heterostructures of pseudomorphic Ge1-yCy and Ge1-x-ySixCy alloys grown onGe (001) substrates
Authors: Dashiell, MW Kolodzey, J Boucaud, P Yam, V Lourtioz, JM
Citation: Mw. Dashiell et al., Heterostructures of pseudomorphic Ge1-yCy and Ge1-x-ySixCy alloys grown onGe (001) substrates, J VAC SCI B, 18(3), 2000, pp. 1728-1731
Lattice calculation of 1/p(2) corrections to alpha(s) and of Lambda(QCD) in the (MOM)over-tilde scheme.
Authors: Boucaud, P Burgio, G Di Renzo, F Leroy, JP Micheli, J Parrinello, C Pene, O Pittori, C Rodriguez-Quintero, J Roiesnel, C Sharkey, K
Citation: P. Boucaud et al., Lattice calculation of 1/p(2) corrections to alpha(s) and of Lambda(QCD) in the (MOM)over-tilde scheme., J HIGH EN P, (4), 2000, pp. NIL_128-NIL_145
Gluon propagator, triple gluon vertex and the QCD coupling constant
Authors: Becirevic, D Boucaud, P Leroy, JP Micheli, J Pene, O Rodriguez-Quintero, J Roiesnel, C
Citation: D. Becirevic et al., Gluon propagator, triple gluon vertex and the QCD coupling constant, NUCL PH B-P, 83-4, 2000, pp. 159-161
Decays of heavy mesons
Authors: Abada, A Becirevic, D Boucaud, P Leroy, JP Lubicz, V Martinelli, G Mescia, F
Citation: A. Abada et al., Decays of heavy mesons, NUCL PH B-P, 83-4, 2000, pp. 268-270
A new mechanism of mass protection for fermions
Authors: Alonso, JL Boucaud, P Carmona, JM Cortes, JL Polonyi, J van der Sijs, AJ
Citation: Jl. Alonso et al., A new mechanism of mass protection for fermions, NUCL PH B-P, 83-4, 2000, pp. 655-657
Asymptotic scaling of the gluon propagator on the lattice - art. no. 114508
Authors: Becirevic, D Boucaud, P Leroy, JP Micheli, J Pene, O Rodriguez-Quintero, J Roiesnel, C
Citation: D. Becirevic et al., Asymptotic scaling of the gluon propagator on the lattice - art. no. 114508, PHYS REV D, 6111(11), 2000, pp. 4508
Phase diagram and quasiparticles of a lattice SU(2) scalar-fermion model in 2+1 dimensions - art. no. 034501
Authors: Alonso, JL Boucaud, P Martin-Mayor, V van der Sijs, AJ
Citation: Jl. Alonso et al., Phase diagram and quasiparticles of a lattice SU(2) scalar-fermion model in 2+1 dimensions - art. no. 034501, PHYS REV D, 6103(3), 2000, pp. 4501
Consistent OPE description of gluon two- and three-point Green functions?
Authors: Boucaud, P Le Yaouanc, A Leroy, JP Micheli, J Pene, O Rodriguez-Quintero, J
Citation: P. Boucaud et al., Consistent OPE description of gluon two- and three-point Green functions?, PHYS LETT B, 493(3-4), 2000, pp. 315-324
K-0-(K)over-bar(0) mixing with Wilson fermions without subtractions
Authors: Becirevic, D Boucaud, P Gimenez, V Lubicz, V Martinelli, G Micheli, J Papinutto, M
Citation: D. Becirevic et al., K-0-(K)over-bar(0) mixing with Wilson fermions without subtractions, PHYS LETT B, 487(1-2), 2000, pp. 74-80
Effect of the bimodal size distribution on the optical properties of self-assembled Ge/Si(001) quantum dots
Authors: Yam, V Le Thanh, V Compagnon, U Gennser, U Boucaud, P Debarre, D Bouchier, D
Citation: V. Yam et al., Effect of the bimodal size distribution on the optical properties of self-assembled Ge/Si(001) quantum dots, THIN SOL FI, 380(1-2), 2000, pp. 78-81
Strain-driven modification of the Ge/Si growth mode in stacked layers: A way to produce Ge islands having equal size in all layers
Authors: Le Thanh, V Yam, V Boucaud, P Zheng, Y Bouchier, D
Citation: V. Le Thanh et al., Strain-driven modification of the Ge/Si growth mode in stacked layers: A way to produce Ge islands having equal size in all layers, THIN SOL FI, 369(1-2), 2000, pp. 43-48
Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor
Authors: Cavassilas, N Aniel, F Boucaud, P Adde, R Maher, H Decobert, J Scavennec, A
Citation: N. Cavassilas et al., Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor, J APPL PHYS, 87(5), 2000, pp. 2548-2552
Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules
Authors: Boucaud, P Gill, KS Williams, JB Sherwin, MS Schoenfeld, WV Petroff, PM
Citation: P. Boucaud et al., Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules, APPL PHYS L, 77(4), 2000, pp. 510-512
Risultati: 1-25 | 26-50