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Results: 1-10 |
Results: 10
Characterization of GaN layers grown on porous silicon
Authors: Missaoui, A Saadoun, M Boufaden, T Bessais, B Rebey, A Ezzaouia, H El Jani, B
Citation: A. Missaoui et al., Characterization of GaN layers grown on porous silicon, MAT SCI E B, 82(1-3), 2001, pp. 98-101
Annealing effect on GaN buffer layer surface
Authors: Halidou, I Boufaden, T Touhami, A Rebey, A El Jani, B
Citation: I. Halidou et al., Annealing effect on GaN buffer layer surface, PHYS ST S-A, 184(1), 2001, pp. 263-271
Heavily silicon-doped GaN by MOVPE
Authors: Halidou, I Benzarti, Z Chine, Z Boufaden, T El Jani, B
Citation: I. Halidou et al., Heavily silicon-doped GaN by MOVPE, MICROELEC J, 32(2), 2001, pp. 137-142
Porous silicon as an intermediate buffer layer for GaN growth on (100) Si
Authors: Matoussi, A Boufaden, T Missaoui, A Guermazi, S Bessais, B Mlik, Y El Jani, B
Citation: A. Matoussi et al., Porous silicon as an intermediate buffer layer for GaN growth on (100) Si, MICROELEC J, 32(12), 2001, pp. 995-998
Growth of GaN films on porous silicon by MOVPE
Authors: Missaoui, A Saadoun, M Ezzaouia, H Bessais, B Boufaden, T Rebey, A El Jani, B
Citation: A. Missaoui et al., Growth of GaN films on porous silicon by MOVPE, PHYS ST S-A, 182(1), 2000, pp. 189-193
The GaN growth by a hot filament metalorganic vapor phase deposition technique
Authors: Boufaden, T Rebey, A Halidou, I Chine, Z Haffouz, S El Jani, B
Citation: T. Boufaden et al., The GaN growth by a hot filament metalorganic vapor phase deposition technique, PHYS ST S-A, 176(1), 1999, pp. 411-414
Anti-Stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process
Authors: Chine, Z Piriou, B Oueslati, M Boufaden, T El Jani, B
Citation: Z. Chine et al., Anti-Stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process, J LUMINESC, 82(1), 1999, pp. 81-84
Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs
Authors: Bchetnia, A Rebey, A Boufaden, T El Jani, B
Citation: A. Bchetnia et al., Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs, J CRYST GR, 207(1-2), 1999, pp. 15-19
Hot filament assisted metalorganic vapor-phase deposition of GaN
Authors: Boufaden, T Rebey, A El Jani, B
Citation: T. Boufaden et al., Hot filament assisted metalorganic vapor-phase deposition of GaN, J CRYST GR, 206(1-2), 1999, pp. 1-7
In situ optical monitoring of the decomposition of GaN thin films
Authors: Rebey, A Boufaden, T El Jani, B
Citation: A. Rebey et al., In situ optical monitoring of the decomposition of GaN thin films, J CRYST GR, 203(1-2), 1999, pp. 12-17
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