Authors: Hadjadj, A Beorchia, A Boufendi, L Huet, S Cabarrocas, PRI

Citation: A. Hadjadj et al., Crystallization of nanostructured silicon films deposited under a low-pressure argon-silane pulsed-glow discharge: Correlation with the plasma duration, J VAC SCI A, 19(1), 2001, pp. 124-129

Authors: Hadjadj, A Beorchia, A Cabarrocas, PRI Boufendi, L Huet, S Bubendorff, JL

Citation: A. Hadjadj et al., Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films, J PHYS D, 34(5), 2001, pp. 690-699

Authors: Viera, G Huet, S Boufendi, L

Citation: G. Viera et al., Crystal size and temperature measurements in nanostructured silicon using Raman spectroscopy, J APPL PHYS, 90(8), 2001, pp. 4175-4183

Authors: Viera, G Huet, S Bertran, E Boufendi, L

Citation: G. Viera et al., Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted inAr: A study by transmission electron microscopy and Raman spectroscopy, J APPL PHYS, 90(8), 2001, pp. 4272-4280

Authors: Hadjadj, A Boufendi, L Huet, S Schelz, S Cabarrocas, PRI Estrade-Szwarckopf, H Rousseau, B

Citation: A. Hadjadj et al., Role of the surface roughness in laser induced crystallization of nanostructured silicon films, J VAC SCI A, 18(2), 2000, pp. 529-535