AAAAAA

   
Results: 1-2 |
Results: 2
Universal impurity ionization parameters in MIS C-V freeze-out characteristics and direct extraction of surface doping concentration
Authors: Bouillon, P Gwoziecki, R Skotnicki, T Alieu, J Gentil, P
Citation: P. Bouillon et al., Universal impurity ionization parameters in MIS C-V freeze-out characteristics and direct extraction of surface doping concentration, IEEE DEVICE, 47(4), 2000, pp. 871-877
Optimization of V-th roll-off in MOSFET's with advanced channel architecture - Retrograde doping and pockets
Authors: Gwoziecki, R Skotnicki, T Bouillon, P Gentil, P
Citation: R. Gwoziecki et al., Optimization of V-th roll-off in MOSFET's with advanced channel architecture - Retrograde doping and pockets, IEEE DEVICE, 46(7), 1999, pp. 1551-1561
Risultati: 1-2 |