Authors: Bourret-Courchesne, ED Yu, KM Benamara, M Liliental-Weber, Z Washburn, J

Citation: Ed. Bourret-courchesne et al., Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer, J ELEC MAT, 30(11), 2001, pp. 1417-1420

Authors: Bourret-Courchesne, ED Ye, Q Yu, KM Ager, JW

Citation: Ed. Bourret-courchesne et al., Evolution of crystallinity of GaN layers grown at low temperature on sapphire with dimethylhydrazine and triethylgallium, J CRYST GR, 231(1-2), 2001, pp. 89-94

Authors: Odedra, R Smith, LM Rushworth, SA Ravetz, MS Clegg, J Kanjolia, R Irvine, SJC Ahmed, MU Bourret-Courchesne, ED Li, NY Cheng, J

Citation: R. Odedra et al., 1,1-dimethylhydrazine as a high purity nitrogen source for MOVPE-water reduction and quantification using nuclear magnetic resonance, gas chromatography-atomic emission detection spectroscopy and cryogenic-mass spectroscopy analytical techniques, J ELEC MAT, 29(1), 2000, pp. 161-164

Authors: Bourret-Courchesne, ED Yu, KM Irvine, SJC Stafford, A Rushworth, SA Smith, LM Kanjolia, R

Citation: Ed. Bourret-courchesne et al., MOVPE of GaN on sapphire using the alternate precursor 1,1-dimethylhydrazine, J CRYST GR, 221, 2000, pp. 246-250

Authors: Benamara, M Liliental-Weber, Z Kellermann, S Swider, W Washburn, J Mazur, J Bourret-Courchesne, ED

Citation: M. Benamara et al., Study of high-quality GaN grown by OMVPE using an intermediate layer, J CRYST GR, 218(2-4), 2000, pp. 447-450

Authors: Bourret-Courchesne, ED Kellermann, S Yu, KM Benamara, M Liliental-Weber, Z Washburn, J Irvine, SJC Stafford, A

Citation: Ed. Bourret-courchesne et al., Reduction of threading dislocation density in GaN using an intermediate temperature interlayer, APPL PHYS L, 77(22), 2000, pp. 3562-3564