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Results: 1-12 |
Results: 12
Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy
Authors: Bousquet, V Heffernan, J Barnes, J Hooper, S
Citation: V. Bousquet et al., Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy, APPL PHYS L, 78(6), 2001, pp. 754-756
Ominous abyss
Authors: Bousquet, V
Citation: V. Bousquet, Ominous abyss, HOSP HEAL N, 74(5), 2000, pp. 10
Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation
Authors: Amokrane, A Dassonneville, S Sieber, B Farvacque, JK Beaumont, B Bousquet, V Gibart, P Ganiere, JD Leifer, K
Citation: A. Amokrane et al., Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation, J PHYS-COND, 12(49), 2000, pp. 10271-10278
Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods
Authors: Vennegues, P Beaumont, B Bousquet, V Vaille, M Gibart, P
Citation: P. Vennegues et al., Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods, J APPL PHYS, 87(9), 2000, pp. 4175-4181
Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire
Authors: Dassonneville, S Amokrane, A Sieber, B Farvacque, JL Beaumont, B Bousquet, V Gibart, P Leifer, K Ganiere, JD
Citation: S. Dassonneville et al., Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire, PHYSICA B, 274, 1999, pp. 148-151
TEM study of the behavior of dislocations during ELO of GaN
Authors: Bousquet, V Vennegues, P Beaumont, B Vaille, M Gibart, P
Citation: V. Bousquet et al., TEM study of the behavior of dislocations during ELO of GaN, PHYS ST S-B, 216(1), 1999, pp. 691-695
New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys
Authors: Chauvet, C Bousquet, V Tournie, E Faurie, JP
Citation: C. Chauvet et al., New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys, J ELEC MAT, 28(6), 1999, pp. 662-665
Treatment of chronic lateral ankle instability with the Chrisman Snook procedure
Authors: Colombet, P Bousquet, V Allard, M Flurin, P Bertet, J
Citation: P. Colombet et al., Treatment of chronic lateral ankle instability with the Chrisman Snook procedure, REV CHIR OR, 85(7), 1999, pp. 722-726
A two-step method for epitaxial lateral overgrowth of GaN
Authors: Beaumont, B Bousquet, V Vennegues, P Vaille, M Bouille, A Gibart, P Dassonneville, S Amokrane, A Sieber, B
Citation: B. Beaumont et al., A two-step method for epitaxial lateral overgrowth of GaN, PHYS ST S-A, 176(1), 1999, pp. 567-571
Optimizing scans on asymmetric reflections
Authors: Laugt, M Bousquet, V
Citation: M. Laugt et V. Bousquet, Optimizing scans on asymmetric reflections, J PHYS D, 32(10A), 1999, pp. A32-A36
Molecular-beam epitaxy of BeTe layers on GaAs substrates
Authors: Tournie, E Bousquet, V Faurie, JP
Citation: E. Tournie et al., Molecular-beam epitaxy of BeTe layers on GaAs substrates, J CRYST GR, 202, 1999, pp. 494-497
Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer
Authors: Bousquet, V Laugt, M Vennegues, P Tournie, E Faurie, JP
Citation: V. Bousquet et al., Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer, J CRYST GR, 202, 1999, pp. 498-501
Risultati: 1-12 |