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Citation: Vg. Bozhkov et al., A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures, TECH PHYS L, 26(10), 2000, pp. 926-928

Authors: Bozhkov, VG Vasiliev, OV

Citation: Vg. Bozhkov et Ov. Vasiliev, Low-frequency noise in metal-semiconductor contacts with local barrier height lowering, SOL ST ELEC, 44(8), 2000, pp. 1487-1494

Authors: Bozhkov, VG Kagadei, VA Torkhov, NA

Citation: Vg. Bozhkov et al., Effect of hydrogenation on the properties of metal-GaAs Schottky barrier contacts, SEMICONDUCT, 32(11), 1998, pp. 1196-1200