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Results: 1-3 |
Results: 3
Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures
Authors: Bradley, ST Young, AP Brillson, LJ Murphy, MJ Schaff, WJ
Citation: St. Bradley et al., Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures, J ELEC MAT, 30(3), 2001, pp. 123-128
Low energy electron-excited nano-luminescence spectroscopy of GaN surfacesand interfaces
Authors: Brillson, LJ Young, AP Jessen, GH Levin, TM Bradley, ST Goss, SH Bae, J Ponce, FA Murphy, MJ Schaff, WJ Eastman, LF
Citation: Lj. Brillson et al., Low energy electron-excited nano-luminescence spectroscopy of GaN surfacesand interfaces, APPL SURF S, 175, 2001, pp. 442-449
Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement
Authors: Bradley, ST Young, AP Brillson, LJ Murphy, MJ Schaff, WJ Eastman, LF
Citation: St. Bradley et al., Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement, IEEE DEVICE, 48(3), 2001, pp. 412-415
Risultati: 1-3 |