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Results: 1-11 |
Results: 11
Molecular and electronic structure of (2,2 '-bidipyrrinato)nickel(II) complexes
Authors: Broring, M Brandt, CD Lex, J Humpf, HU Bley-Escrich, J Gisselbrecht, JP
Citation: M. Broring et al., Molecular and electronic structure of (2,2 '-bidipyrrinato)nickel(II) complexes, EUR J INORG, (10), 2001, pp. 2549-2556
Tripyrrin - the missing link in the series of oligopyrrolic ligands
Authors: Broring, M Brandt, CD
Citation: M. Broring et Cd. Brandt, Tripyrrin - the missing link in the series of oligopyrrolic ligands, CHEM COMMUN, (5), 2001, pp. 499-500
A cationic allenylideneruthenium(II) complex with two bulky hemilabile phosphine ligands
Authors: Jung, SF Brandt, CD Werner, H
Citation: Sf. Jung et al., A cationic allenylideneruthenium(II) complex with two bulky hemilabile phosphine ligands, NEW J CHEM, 25(9), 2001, pp. 1101-1103
Easy and reversible C-H activation of a substituted benzene
Authors: Canepa, G Brandt, CD Werner, H
Citation: G. Canepa et al., Easy and reversible C-H activation of a substituted benzene, ORGANOMETAL, 20(4), 2001, pp. 604-606
Breaking the rule: Synthesis and molecular structure of dinuclear rhodium complexes with bridging and semibridging trialkylphosphane ligands
Authors: Pechmann, T Brandt, CD Werner, H
Citation: T. Pechmann et al., Breaking the rule: Synthesis and molecular structure of dinuclear rhodium complexes with bridging and semibridging trialkylphosphane ligands, ANGEW CHEM, 39(21), 2000, pp. 3909
Growth and characterization of high-purity SiC single crystals
Authors: Augustine, G Balakrishna, V Brandt, CD
Citation: G. Augustine et al., Growth and characterization of high-purity SiC single crystals, J CRYST GR, 211(1-4), 2000, pp. 339-342
Status of SiC power devices at Northrop Grumman
Authors: Agarwal, AK Seshadri, S Casady, JB Mani, SS MacMillan, MF Saks, N Burk, AA Augustine, G Balakrishna, V Sanger, PA Brandt, CD Rodrigues, R
Citation: Ak. Agarwal et al., Status of SiC power devices at Northrop Grumman, DIAM RELAT, 8(2-5), 1999, pp. 295-301
Advances in SiC materials and devices: an industrial point of view
Authors: Siergiej, RR Clarke, RC Sriram, S Agarwal, AK Bojko, RJ Morse, AW Balakrishna, V MacMillan, MF Burk, AA Brandt, CD
Citation: Rr. Siergiej et al., Advances in SiC materials and devices: an industrial point of view, MAT SCI E B, 61-2, 1999, pp. 9-17
SiC and GaN wide bandgap semiconductor materials and devices
Authors: Burk, AA O'Loughlin, MJ Siergiej, RR Agarwal, AK Sriram, S Clarke, RC MacMillan, MF Balakrishna, V Brandt, CD
Citation: Aa. Burk et al., SiC and GaN wide bandgap semiconductor materials and devices, SOL ST ELEC, 43(8), 1999, pp. 1459-1464
SiC for applications in high-power electronics
Authors: Brandt, CD Clarke, RC Siergiej, RR Casady, JB Sriram, S Agarwal, AK Morse, AW
Citation: Cd. Brandt et al., SiC for applications in high-power electronics, SEM SEMIMET, 52, 1998, pp. 195-236
4H-SiC power devices for use in power electronic motor control
Authors: Casady, JB Agarwal, AK Seshadri, S Siergiej, RR Rowland, LB MacMillan, MF Sheridan, DC Sanger, PA Brandt, CD
Citation: Jb. Casady et al., 4H-SiC power devices for use in power electronic motor control, SOL ST ELEC, 42(12), 1998, pp. 2165-2176
Risultati: 1-11 |