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Citation: O. Breitschadel et al., Short-channel effects in AlGAN/GaN HEMTs, MAT SCI E B, 82(1-3), 2001, pp. 238-240

Authors: Hsieh, JT Hwang, JM Hwang, HL Breitschadel, O Schweizer, H

Citation: Jt. Hsieh et al., Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy: the role of oxygen on reactive ion beam etching of GaN in O-2/Arplasmas, APPL SURF S, 175, 2001, pp. 450-455

Authors: Breitschadel, O Hsieh, JT Kuhn, B Scholz, F Schweizer, H

Citation: O. Breitschadel et al., Effect of Ar ion beam channeling on AlGaN/GaN heterostructures during the ion beam etching process, APPL PHYS L, 76(14), 2000, pp. 1899-1901

Authors: Breitschadel, O Kuhn, B Scholz, F Schweizer, H

Citation: O. Breitschadel et al., Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process, J ELEC MAT, 28(12), 1999, pp. 1420-1423

Authors: Breitschadel, O Grabeldinger, H Kuhn, B Scholz, F Walthes, W Berroth, M Daumiller, I Schad, KB Kohn, E Schweizer, H

Citation: O. Breitschadel et al., Short-channel AlGaN/GaN HEMTs with 70 nm T-gate, ELECTR LETT, 35(23), 1999, pp. 2018-2019