Authors:
Hibbard, DL
Chuang, RW
Zhao, YS
Jensen, CL
Lee, HP
Dong, ZJ
Shih, R
Bremser, M
Citation: Dl. Hibbard et al., Thermally induced variation in barrier height and ideality factor of Ni/Aucontacts to p-GaN, J ELEC MAT, 29(3), 2000, pp. 291-296
Authors:
Protzmann, H
Luenenbuerger, M
Bremser, M
Heuken, M
Juergensen, H
Citation: H. Protzmann et al., Uniformity control of group-III nitrides grown on 5 x 3 inch Al2O3 substrates in Planetary Reactors((R)), J CRYST GR, 221, 2000, pp. 629-634