Authors: Brockt, G Lakner, H

Citation: G. Brockt et H. Lakner, Nanoscale EELS analysis of dielectric function and bandgap properties in GaN and related materials, MICRON, 31(4), 2000, pp. 435-440

Authors: Scholz, F Off, J Fehrenbacher, E Gfrorer, O Brockt, G

Citation: F. Scholz et al., Investigations on structural properties of GaInN-GaN multi quantum well structures, PHYS ST S-A, 180(1), 2000, pp. 315-320

Authors: Brockt, G Lakner, H

Citation: G. Brockt et H. Lakner, Probing the local dielectric optical properties of group III-Nitrides by spatially resolved EELS on the nanometer scale, MAT SCI E B, 59(1-3), 1999, pp. 155-158

Authors: Off, J Scholz, F Fehrenbacher, E Gfrorer, O Hangleiter, A Brockt, G Lakner, H

Citation: J. Off et al., Investigations on the V-defect formation in GaInN-GaN multi quantum well structures, PHYS ST S-B, 216(1), 1999, pp. 529-532

Authors: Lakner, H Rafferty, B Brockt, G

Citation: H. Lakner et al., Electronic structure analysis of (In,Ga,Al)N heterostructures on the nanometre scale using EELS, J MICROSC O, 194, 1999, pp. 79-83